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PDF IXYJ30N120C3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYJ30N120C3D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
1200V XPTTM GenX3TM
IGBT w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT
for 20-50 kHz Switching
IXYJ30N120C3D1
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
VISOL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
50/60 Hz, RM, t = 1min
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
32 A
14 A
15 A
128 A
20 A
400 mJ
ICM = 60
VCE VCES
140
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
2500
5
V~
g
VCES = 1200V
IC110 = 14A
VCE(sat) 3.3V
tfi(typ) = 88ns
ISO TO-247TM
E153432
G
CE
G = Gate
E = Emitter
Isolated Tab
C = Collector
Features
Optimized for Low Switching Losses
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
350 μA
100 nA
3.3 V
3.7 V
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100559(9/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
5.0
4.5 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
4.0 VCE = 600V
3.5
I C = 60A
27
24
21
18
3.0 15
2.5 12
2.0 9
1.5 6
I C = 30A
1.0 3
0.5 0
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
5.0
4.5 Eoff
Eon - - - -
4.0 RG = 10Ω , VGE = 15V
VCE = 600V
3.5
3.0 I C = 60A
2.5
2.0
1.5
1.0 IC = 30A
0.5
0.0
25
50 75 100
TJ - Degrees Centigrade
125
20
16
12
8
4
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
220 260
200
tfi
td(off) - - - -
240
180
RG = 10Ω , VGE = 15V
220
VCE = 600V
160 200
140 180
120
TJ = 150ºC
160
100 140
80 120
60
TJ = 25ºC
100
40 80
20 60
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
IXYJ30N120C3D1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
3.0
Eoff Eon - - - -
2.5 RG = 10Ω , VGE = 15V
VCE = 600V
2.0
TJ = 150ºC
1.5
TJ = 25ºC
1.0
20
16
12
8
4
0.5 0
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
220 550
200 t f i
td(off) - - - -
180 TJ = 150ºC, VGE = 15V
VCE = 600V
160
500
450
400
140
120 I C = 30A
350
300
100 250
80 I C = 60A
60
200
150
40 100
20 50
15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
180 180
160 t f i
td(off) - - - -
RG = 10Ω , VGE = 15V
140 VCE = 600V
170
160
120
I C = 30A
100
150
140
80 130
60
I C = 60A
40
120
110
20
25
50 75 100 125
TJ - Degrees Centigrade
100
150
5 Page | ||
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| PDF Descargar | [ Datasheet IXYJ30N120C3D1.PDF ] | |
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