PDF IXYK100N120B3 Data sheet ( Hoja de datos )

Número de pieza	IXYK100N120B3
Descripción	IGBT
Fabricantes	IXYS
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No Preview Available ! Preliminary Technical Information 1200V XPTTM IGBTs GenX3TM IXYK100N120B3 IXYX100N120B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 100A 2.6V 240ns TO-264 (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1Ω Clamped Inductive Load TC = 25°C 225 160 100 530 50 1.2 ICM = 200 ≤@VCE VCES 1150 -55 ... +175 175 -55 ... +175 A A A A A J A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb. TO-264 PLUS247 10 g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 25 μA 1 mA ±100 nA 2.20 2.76 2.60 V V G C E PLUS247 (IXYX) Tab G G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features z Optimized for 5-30kHZ Switching z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100519A(03/13) 1 page Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 13 Eoff Eon - - - - 12 TJ = 150ºC , VGE = 15V VCE = 600V 11 10 I C = 100A 9 8 I C = 50A 7 6 123456789 RG - Ohms 18 16 14 12 10 8 6 4 10 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 12 11 Eoff Eon - - - - RG = 1Ω , VGE = 15V 10 VCE = 600V 9 I C = 100A 8 7 6 I C = 50A 5 4 25 50 75 100 125 TJ - Degrees Centigrade 16 14 12 10 8 6 4 2 0 150 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 600 290 550 t f i td(off) - - - - 270 RG = 1Ω , VGE = 15V 500 VCE = 600V 250 450 TJ = 150ºC 230 400 210 350 300 TJ = 25ºC 190 170 250 150 200 130 50 55 60 65 70 75 80 85 90 95 100 IC - Amperes IXYK100N120B3 IXYX100N120B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current 12 11 Eoff Eon - - - - RG = 1Ω , VGE = 15V 10 VCE = 600V 9 TJ = 150ºC 16 14 12 10 88 76 6 TJ = 25ºC 4 52 40 50 55 60 65 70 75 80 85 90 95 100 IC - Amperes Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 800 700 t f i td(off) - - - - TJ = 150ºC, VGE = 15V 600 VCE = 600V I C = 50A 500 550 500 450 400 400 350 300 300 I C = 100A 200 250 100 200 0 150 1 2 3 4 5 6 7 8 9 10 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 700 340 t f i td(off) - - - - 600 RG = 1Ω , VGE = 15V VCE = 600V 500 I C = 50A 300 260 400 220 300 180 200 I C = 100A 140 100 25 50 75 100 125 TJ - Degrees Centigrade 100 150 © 2013 IXYS CORPORATION, All Rights Reserved 5 Page

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