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PDF IXYX120N120B3 Data sheet ( Hoja de datos )
| Número de pieza | IXYX120N120B3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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1200V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 10-30 kHz Switching
Advance Technical Information
IXYK120N120B3
IXYX120N120B3
VCES = 1200V
IC110 = 120A
VCE(sat) 2.2V
tfi(typ) = 260ns
TO-264P (IXYK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1
Clamped Inductive Load
TC = 25°C
320
160
120
800
60
2
ICM = 240
VCE VCES
1500
-55 ... +175
175
-55 ... +175
A
A
A
A
A
J
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264P
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 1mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
1.5 mA
200 nA
1.8 2.2 V
2.4 V
G
C
E
PLUS247 (IXYX)
Tab
G
G
C
E
G = Gate
C = Collector
Tab
E = Emitter
Tab = Collector
Features
Square RBSOA
International Standard Packages
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100646(02/15)
1 page | ||
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