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PDF IXYN80N90C3H1 Data sheet ( Hoja de datos )
| Número de pieza | IXYN80N90C3H1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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900V XPTTM IGBT
GenX3TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYN80N90C3H1
VCES = 900V
IC90 = 70A
VCE(sat) 2.7V
tfi(typ) = 86ns
E
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICF19100
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 90°C
= 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2
Clamped Inductive Load
TC = 25°C
50/60Hz
t = 1min
IISOL 1mA
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
900 V
900 V
±20 V
±30 V
115 A
70 A
42 A
340 A
ICM = 160
@VCE VCES
500
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30 g
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
ither emitter terminal can be used as
Main or Kelvin Emitter
Features
Optimized for Low Switching Losses
Square RBSOA
Isolation Voltage 2500V~
Anti-Parallel Sonic Diode
Positive Thermal Coefficient of
Vce(sat)
High Current Handling Capability
International Standard Package
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 μA
1.5 mA
±100 nA
2.3 2.7 V
2.9 V
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100522A(12/15)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
3.4
Eoff Eon - - - -
3.0 TJ = 150ºC , VGE = 15V
VCE = 450V
2.6
I C = 80A
2.2
12
10
8
6
1.8 4
1.4 I C = 40A
2
1.0 0
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.0
3.5 Eoff
Eon - - - -
RG = 2ΩVGE = 15V
3.0 VCE = 450V
2.5
IC = 80A
8
7
6
5
2.0 4
1.5 3
1.0 2
IC = 40A
0.5 1
0.0
25
50 75 100 125
TJ - Degrees Centigrade
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
225 150
200
tfi
td(off) - - - -
140
RG = 2Ω, VGE = 15V
175
VCE = 450V
130
150 120
TJ = 150ºC
125 110
100 100
75 TJ = 25ºC
90
50 80
25 70
40 50 60 70 80 90 100
IC - Amperes
IXYN80N90C3H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
5
Eoff Eon - - - -
4 RG = 2ΩVGE = 15V
VCE = 450V
3
10
8
6
2 TJ = 150ºC
4
1 TJ = 25ºC
2
00
40 50 60 70 80 90 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
250 360
225 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
200 VCE = 450V
320
280
175
I C = 40A
150
240
200
125 160
I C = 80A
100 120
75 80
50 40
2 3 4 5 6 7 8 9 10 11 12 13 14 15
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
200 180
t f i td(off) - - - -
175 RG = 2Ω, VGE = 15V
VCE = 450V
150
I C = 40A
160
140
125 120
100 100
I C = 80A
75 80
50
25
50 75 100 125
TJ - Degrees Centigrade
60
150
© 2015 IXYS CORPORATION, All Rights Reserved
5 Page | ||
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| PDF Descargar | [ Datasheet IXYN80N90C3H1.PDF ] | |
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