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PDF IXYX30N170CV1 Data sheet ( Hoja de datos )

Número de pieza IXYX30N170CV1
Descripción IGBT
Fabricantes IXYS 
Logotipo IXYS Logotipo



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No Preview Available ! IXYX30N170CV1 Hoja de datos, Descripción, Manual

High Voltage
XPTTM IGBT
w/ Diode
Preliminary Technical Information
IXYX30N170CV1
VCES = 1700V
IC110 = 30A
VCE(sat)  3.7V
tfi(typ) = 107ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
1700
1700
±20
±30
V
V
V
V
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
CVlGaEm=p1e5dVIn, dTuVJc=tiv1e5L0o°Cad, RG = 2.7
108
30
45
255
ICM
= 120
1360
A
A
A
A
A
V
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
937
-55 ... +175
175
-55 ... +175
300
260
W
°C
°C
°C
°C
°C
Mounting Force
20..120 /4.5..27
N/lb
6g
PLUS247 (IXYX)
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
High Voltage Package
High Blocking Voltage
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
1700
V
3.0 5.0 V
25 A
5 mA
100 nA
3.0 3.7 V
4.1 V
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
© 2016 IXYS CORPORATION, All Rights Reserved
DS100724A(7/16)

1 page




IXYX30N170CV1 pdf
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
12 30
Eoff Eon
10 TJ = 150ºC , VGE = 15V
VCE = 850V
25
8
I C = 60A
20
6 15
4
I C = 30A
10
25
0
0
12
10
8
5 10 15 20 25 30
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff Eon
RG = 2.7VGE = 15V
VCE = 850V
I C = 60A
0
35
24
20
16
6 12
48
IC = 30A
24
00
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
240 280
220
t f i td(off)
260
RG = 2.7, VGE = 15V
200
VCE = 850V
240
180 220
160 200
TJ = 125ºC
140 180
120 160
100 140
80
TJ = 25ºC
120
60 100
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2016 IXYS CORPORATION, All Rights Reserved
IXYX30N170CV1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
10
Eoff Eon
8 RG = 2.7VGE = 15V
VCE = 850V
TJ = 150ºC
20
16
6 12
TJ = 25ºC
48
24
00
15 20 25 30 35 40 45 50 55 60
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
260
1000
240 t f i
td(off)
220 TJ = 150ºC, VGE = 15V
VCE = 850V
200
900
800
700
180
I C = 60A
600
160 500
140 400
120
I C = 30A
300
100 200
80 100
60
0
0
5 10 15 20 25 30 35
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
220 260
200 t f i
td(off)
RG = 2.7, VGE = 15V
180 VCE = 850V
240
220
160
I C = 60A
200
140 180
120 160
I C = 30A
100 140
80 120
60
25
50 75 100 125
TJ - Degrees Centigrade
100
150

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