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DMT8012LSS 데이터시트 PDF




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부품번호 DMT8012LSS 기능
기능 N-CHANNEL ENHANCEMENT MODE MOSFET
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DMT8012LSS 데이터시트, 핀배열, 회로
DMT8012LSS
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
80V
RDS(ON) Max
16.5mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
ID Max
TA = +25°C
9.7A
8.8A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low RDS(ON) Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in:
Notebook Battery Power Management
Loadswitches
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
S
D
D
SD
S DG
Top View
GD
Top View
Internal Schematic
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT8012LSS-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
85
T8012LS
YY WW
= Manufacturer’s Marking
T8012LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
14
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© Diodes Incorporated




DMT8012LSS pdf, 반도체, 판매, 대치품
0.04
0.035
0.03
0.025
0.02
0.015
0.01
VGS = 4.5V
ID = 6A
VGS = 10V
ID = 12A
0.005
0-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
30
VGS = 0V
25
20
15
10 TA = 125oC
TA = 85oC
TA = 150oC
5
TA = 25oC
TA = -55oC
0
0 0.3 0.6 0.9 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10000
f=1MHz
1.5
1000
Ciss
DMT8012LSS
2.6
2.4
2.2
2 ID = 1mA
1.8 ID = 250µA
1.6
1.4
1.2
1
0.8
-50 -25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10
8
6
4
VDS = 40V, ID = 12A
2
0
0 10 20 30 40 50
Qg (nC)
Figure 10. Gate Charge
100
RDS(ON) Limited
PW =100µs
10
100
10
Coss
Crss
1
0
5 10 15 20 25 30 35 40 45 50 55 60
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
1 PW =1ms
PW =10ms
PW =100ms
0.1
PW =1s
TJ(Max) = 150TC = 25
Single Pulse
DUT on 1*MRP Board
VGS= 10V
0.01
0.1 1
PW =10s
DC
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
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DMT8012LSS 전자부품, 판매, 대치품
DMT8012LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
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© Diodes Incorporated

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부품번호상세설명 및 기능제조사
DMT8012LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

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