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D669 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 D669
기능 BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
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D669 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
2SD669/A
NPN SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC
2SB649/A
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 2SD669xG-x-AA3-R
- 2SD669xG-x-AB3-R
- 2SD669xG-x-AE3-R
- 2SD669xG-x-AE3-6-R
2SD669xL-x-T60-K
2SD669xG-x-T60-K
2SD669xL-x-T6C-K
2SD669xG-x-T6C-K
2SD669xL-x-T6S-K
2SD669xG-x-T6S-K
2SD669xL-x-T92-B
2SD669xG-x-T92-B
2SD669xL-x-T92-K
2SD669xG-x-T92-K
2SD669xL-x-T9N-B
2SD669xG-x-T9N-B
2SD669xL-x-T9N-K
2SD669xG-x-T9N-K
2SD669xL-x-TM3-T
2SD669xG-x-TM3-T
2SD669xL-x-TN3-R
2SD669xG-x-TN3-R
Note: Pin Assignment: B: Base C: Collector E: Emitter
Package
SOT-223
SOT-89
SOT-23
SOT-23
TO-126
TO-126C
TO-126S
TO-92
TO-92
TO-92NL
TO-92NL
TO-251
TO-252
Pin Assignment
123
BCE
BCE
BEC
EBC
ECB
ECB
ECB
ECB
ECB
ECB
ECB
BCE
BCE
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
Bulk
Bulk
Bulk
Tape Box
Bulk
Tape Box
Bulk
Tube
Tape Reel
2SD669xG-x-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Green Package
(6) Collector-Emitter Voltage
(1) B: Tape Box, K: Bulk, R: Tape Reel, T: Tube
(2) refer to Pin Assignment
(3) AA3: SOT-223, AB3: SOT-89, AE3: SOT-23
(2) T60: TO-126, T6C: TO-126C, T6S: TO-126S
(2) TM3: TO-251, TN3: TO-252, T92: TO-92
(2) T9N: TO-92NL
(4) x: refer to Classification of hFE1
(5) G: Halogen Free and Lead Free, L: Lead Free
(6) A: 160V, Blank: 120V
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R204-005.R




D669 pdf, 반도체, 판매, 대치품
2SD669/A
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown 2SD669
Voltage
2SD669A
Collector to Emitter Breakdown 2SD669
Voltage (VBE=0V)
2SD669A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cutoff Current
ON CHARACTERISTICS
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Rise Time
Storage Time
Fall Time
Note: Pulse test.
SYMBOL
TEST CONDITIONS
BVCBO
BVCEO
IC=1mA, IE=0
IC=10mA, RBE=
BVCES
BVEBO
ICBO
IEBO
IC=1mA, VBE=0V
IE=1mA, IC=0
VCB=160V, IE=0
VEB=4V, IC=0
hFE1
hFE2
VCE(SAT)
VBE(SAT)
VBE
VCE=5V, IC=150mA (Note)
VCE=5V, IC=500mA (Note)
IC=600mA, IB=50mA (Note)
IC=600mA, IB=50mA (Note)
VCE=5V, IC=150mA (Note)
fT VCE=5V, IC=150mA (Note)
Cob VCB=10V, IE=0, f=1MHz
tR VCC=50V, IC=0.5A,
tS IB1=IB2=10mA, tP=25μs,
tF Duty Cycle1%
MIN
180
120
160
120
160
5
60
30
CLASSIFICATION OF hFE1
RANK
RANGE
B
60-120
C
100-200
TYP MAX UNIT
V
V
V
V
10 μA
10 μA
320
1V
1.2 V
1.5 V
140 MHz
14 pF
0.5
1.5 μs
0.7
D
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R204-005.R

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