Datasheet.kr   

MIXA20WB1200TMI 데이터시트 PDF




IXYS에서 제조한 전자 부품 MIXA20WB1200TMI은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 MIXA20WB1200TMI 자료 제공

부품번호 MIXA20WB1200TMI 기능
기능 XPT IGBT
제조업체 IXYS
로고 IXYS 로고


MIXA20WB1200TMI 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



전체 11 페이지수

미리보기를 사용할 수 없습니다

MIXA20WB1200TMI 데이터시트, 핀배열, 회로
XPT IGBT Module
MIXA20WB1200TMI
tentative
3~
Rectifier
Brake
Chopper
3~
Inverter
VRRM =
I DAV =
I FSM =
1600 V VCES = 1200 V VCES = 1200 V
70 A IC25 = 28 A IC25 = 28 A
270 A V =CE(sat) 1.8 V V =CE(sat) 1.8 V
6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
Part number
MIXA20WB1200TMI
P P1
T1 G1 G3 G5
L1
L2
BU
V
W
L3
T2
GB G2
G4 G6
Backside: isolated
N NB EU
EV EW
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: MiniPack2B
Isolation Voltage: 3000 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129




MIXA20WB1200TMI pdf, 반도체, 판매, 대치품
Inverter IGBT
Symbol Definition
VCES
VGES
VGEM
I C25
I C80
Ptot
VCE(sat)
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I GES
Q G(on)
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
I CM
SCSOA
t SC
I SC
R thJC
RthCH
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
MIXA20WB1200TMI
Conditions
IC = 15A; VGE = 15 V
IC = 0.6mA; VGE = VCE
VCE = VCES; VGE = 0 V
VGE = ±20 V
VCE = 600 V; VGE = 15 V; IC =
inductive load
VCE = 600 V; IC = 15 A
VGE = ±15 V; RG= 56
VGE = ±15 V; RG= 56
VCEmax = 1200 V
VCEmax = 900 V
VCE = 900 V; VGE = ±15 V
RG= 56 ; non-repetitive
TVJ = 25°C
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
15 A
TVJ = 125°C
TVJ = 125°C
TVJ = 125°C
tentative
Ratings
min. typ. max. Unit
1200 V
±20 V
±30 V
28 A
20 A
100 W
1.8 2.1 V
2.1 V
5.4 5.9 6.5 V
0.1 mA
0.1 mA
500 nA
48 nC
70 ns
40 ns
250 ns
100 ns
1.6 mJ
1.7 mJ
45 A
10 µs
60 A
1.26 K/W
0.42 K/W
Inverter Diode
VRRM
max. repetitive reverse voltage
IF25 forward current
IF 80
VF forward voltage
IR reverse current
Qrr
I RM
t rr
E rec
R thJC
R thCH
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
IF = 10A
VR = VRRM
VR = 600 V
-diF /dt = 250 A/µs
IF = 10A; VGE = 0 V
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
1200 V
18 A
12 A
2.20 V
2.20 V
0.1 mA
0.2 mA
1.3 µC
10.5 A
350 ns
0.4 mJ
2.5 K/W
0.83 K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129

4페이지










MIXA20WB1200TMI 전자부품, 판매, 대치품
Rectifier
MIXA20WB1200TMI
tentative
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sine 180°
Fig. 5 Max. forward current
versus case temperature
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129

7페이지


구       성 총 11 페이지수
다운로드[ MIXA20WB1200TMI.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
MIXA20WB1200TMI

XPT IGBT

IXYS
IXYS
MIXA20WB1200TML

Converter - Brake - Inverter Module

IXYS
IXYS

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵