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PDF MIXA60WH1200TEH Data sheet ( Hoja de datos )
| Número de pieza | MIXA60WH1200TEH | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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MIXA60WH1200TEH
XPT IGBT Module
preliminary
3~
Rectifier
Brake
Chopper
3~
Inverter
VRRM =
I DAV =
I TSM =
1600 V VCES = 1200 V VCES = 1200 V
135 A IC25 = 60 A IC25 = 85 A
700A V =CE(sat) 1.8 V V =CE(sat) 1.8 V
6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC
Part number
MIXA60WH1200TEH
25 26
24 23 22
7
123
17
16
8
9
27 28
13
Features / Advantages:
● Thyristor/Standard Rectifier for line frequency
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
19 21
18 20
65
14 15
NTC
10
4
11
12
Backside: isolated
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
Package:
● Housing: E3-Pack
●_International standard package
●_RoHS compliant
●_Isolation voltage: 3600 V~
●_Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20111111b
1 page  
MIXA60WH1200TEH
Package E3-Pack
Symbol Definition
I RMS
Tstg
T VJ
Weight
RMS current
storage temperature
virtual junction temperature
M D mounting torque
Conditions
per terminal
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
d Spp/App
d Spb/Apb
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
preliminary
Ratings
min. typ. max.
300
-40 125
-40 150
270
36
Unit
A
°C
°C
g
Nm
3600
3000
6.0
12.0
V
V
mm
mm
2D Data Matrix
XXX XX-XXXXX YYWWx
Logo UL Part number Date Code Location
Part number
M = Module
I = IGBT
X = XPT IGBT
A = Gen 1 / std
60 = Current Rating [A]
WH = 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit
1200 = Reverse Voltage [V]
T = Thermistor \ Temperature sensor
EH = E3-Pack
Ordering
Standard
Part Number
MIXA60WH1200TEH
Marking on Product
MIXA60WH1200TEH
Delivery Mode
Box
Quantity Code No.
5 509622
Similar Part
MIXA60WB1200TEH
Package
E3-Pack
Voltage class
1200
Temperature Sensor NTC
Symbol Definition
R25
B 25/50
resistance
temperature coefficient
Conditions
TVJ = 25°
min.
4.75
typ. max.
5 5.25
3375
Unit
kΩ
K
Equivalent Circuits for Simulation
I V0
R0
V 0 max
R0 max
threshold voltage
slope resistance *
Rectifier
0.85
3.9
Brake
IGBT
1.1
40
* on die level
Brake
Diode
1.2
27
Inverter
IGBT
1.1
25.1
T VJ = 150°C
Inverter
Diode
1.22 V
13 mΩ
105
104
R
[]
103
102
0
25 50 75 100 125 150
TC [°C]
Typ. NTC resistance vs. temperature
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20111111b
5 Page 
Inverter Diode
120
TVJ = 125°C
100 25°C
80
IC
60
[A]
40
20
0
0
Fig. 1
123
VCE [V]
Typ. Forward current
versus VF
14
TVJ = 125°C
VR = 600 V
12
10
Qrr 8
120A
60 A
[μC] 6
4
30 A
2
600 800 1000 1200
-diF /dt [A/μs]
Fig. 2 Typ. reverse recovery
charge Qrr versus di/dt
20
IC = 50 A
VCE = 600 V
15
700
TVJ = 125°C
VR = 600 V
600
Kf 10
5
500
trr
400
[ns]
300
120A
60 A
30 A
0
0 50 100 150
TVJ [°C]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
200
200
600
800 1000 1200
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
1
MIXA60WH1200TEH
preliminary
90
TVJ = 125°C
80 VR = 600 V
120A
70
IRR 60
[A] 50
60 A
30 A
40
30
20
600
800 1000 1200
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus di/dt
4.0
TVJ = 125°C
VR = 600 V
3.2
120A
2.4
Erec
1.6
[mJ]
0.8
60 A
30 A
0.0
600
800 1000 1200
-diF /dt [A/μs]
Fig. 6 Typ. recovery energy
Erec versus -di/dt
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
t [s]
1
Fig. 7 Transient thermal impedance junction to case
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20111111b
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet MIXA60WH1200TEH.PDF ] | |
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