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PDF MIXA61H1200ED Data sheet ( Hoja de datos )
| Número de pieza | MIXA61H1200ED | |
| Descripción | XPT IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MIXA61H1200ED (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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IGBT XPT Module
H Bridge
Preliminary data
Part name (Marking on product)
MIXA 61H1200ED
MIXA 61H1200ED
VCES = 1200 V
IC25 = 85 A
VCE(sat) = 1.8 V
13
D1 D5
1 T1
9 T5
2 10
16
14
D2 D6
3 T2
11 T6
4 12
17
E72873
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E2-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110509a
1-6
1 page  
Inverter T1 - T6
100
VGE = 15 V
80
60
IC
[A] 40
TVJ = 25°C
TVJ = 125°C
20
0
012
VCE [V]
Fig. 1 Typ. output characteristics
3
100
80
IC 60
[A] 40
20 TVJ = 125°C
TVJ = 25°C
0
5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
10
RG = 15 Ω
VCE = 600 V
8 VGE = ±15 V
TVJ = 125°C
Eon
Eoff
6
E
[mJ] 4
2
0
0 20 40 60 80 100 120
IC [A]
Fig. 5 Typ. switching energy vs. collector current
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
MIXA 61H1200ED
100
80
VGE = 15 V
17 V
19 V
13 V
11 V
60
IC
TVJ = 125°C
[A] 40
20
9V
0
0123
VCE [V]
Fig. 2 Typ. output characteristics
20
IC = 50 A
VCE = 600 V
15
4
VGE 10
[V]
5
0
0 40 80 120 160 200
QG [nC]
Fig. 4 Typ. turn-on gate charge
240
6.0
5.5
E
5.0
[mJ]
4.5
Eoff
Eon
IC = 50 A
VCE = 600 V
VGE = ±15 V
TVJ = 125°C
4.0
12 16 20 24 28 32
RG [WΩ ]
Fig. 6 Typ. switching energy vs. gate resistance
20110509a
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MIXA61H1200ED.PDF ] | |
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