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MIXA81WB1200TEH 데이터시트 PDF




IXYS에서 제조한 전자 부품 MIXA81WB1200TEH은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 MIXA81WB1200TEH 기능
기능 XPT IGBT
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MIXA81WB1200TEH 데이터시트, 핀배열, 회로
XPT IGBT Module
MIXA81WB1200TEH
tentative
3~
Rectifier
Brake
Chopper
3~
Inverter
VRRM =
I DAV =
I FSM =
1600 V VCES = 1200 V VCES = 1200 V
290 A IC25 = 90 A IC25 = 120 A
1200 A V =CE(sat) 1.8 V V =CE(sat) 1.8 V
6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
Part number
MIXA81WB1200TEH
30/31/32 26/27
1/2 3/4 5/6
23
7
28/29
22
10
8/9
20
33/34/35 24/25
21
13
11/12
18
Backside: isolated
17
14/15
16
19
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Pumps, Fans
Package: E3-Pack
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Height: 17 mm
Base plate: Copper
internally DCB isolated
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719




MIXA81WB1200TEH pdf, 반도체, 판매, 대치품
Inverter IGBT
Symbol Definition
VCES
VGES
VGEM
I C25
I C80
Ptot
VCE(sat)
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I GES
Q G(on)
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
I CM
SCSOA
t SC
I SC
R thJC
RthCH
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
MIXA81WB1200TEH
Conditions
TVJ = 25°C
TC = 25°C
TC = 80°C
TC = 25°C
IC = 75 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
IC = 3 mA; VGE = VCE
TVJ = 25°C
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 125°C
VGE = ±20 V
VCE = 600 V; VGE = 15 V; IC = 75 A
inductive load
VCE = 600 V; IC = 75 A
VGE = ±15 V; RG= 10
VGE = ±15 V; RG= 10
VCEmax = 1200 V
VCEmax = 1200 V
VCE = 900 V; VGE = ±15 V
RG= 10 ; non-repetitive
TVJ = 125°C
TVJ = 125°C
TVJ = 125°C
tentative
Ratings
min. typ. max. Unit
1200 V
±20 V
±30 V
120 A
84 A
390 W
1.8 2.1 V
2.1 V
5.4 5.9 6.5 V
0.2 mA
0.6 mA
500 nA
230 nC
70 ns
40 ns
250 ns
100 ns
6.8 mJ
8.3 mJ
225 A
300
0.10
10 µs
A
0.32 K/W
K/W
Inverter Diode
VRRM
max. repetitive reverse voltage
IF25 forward current
IF 80
VF forward voltage
IR
Qrr
I RM
t rr
E rec
R thJC
R thCH
reverse current
* not applicable, see Ices value above
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
IF =100 A
VR = VRRM
VR = 600 V
-diF /dt = 1600 A/µs
IF = 100 A; VGE = 0 V
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
1.90
*
12.5
100
350
4
0.10
1200 V
135 A
90 A
2.20 V
V
* mA
mA
µC
A
ns
mJ
0.4 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719

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MIXA81WB1200TEH 전자부품, 판매, 대치품
Rectifier
200
150
IF 100
[A]
50 TVJ = 125°C
TVJ = 25°C
0
0.0 0.5 1.0 1.5 2.0
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
MIXA81WB1200TEH
tentative
Fig. 2 Surge overload current
Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sine 180°
1
Fig. 5 Max. forward current
versus case temperature
ZthJC
0.1
[K/W]
0.01
0.001
0.01
0.1
t [s]
Fig. 6 Transient thermal impedance junction to case
Ri i
0.102 0.0028
0.0776 0.07
0.1768 0.036
0.1136 0.07
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120719

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MIXA81WB1200TEH

XPT IGBT

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