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PDF SS8550LT1 Data sheet ( Hoja de datos )
| Número de pieza | SS8550LT1 | |
| Descripción | PNP Epitaxial Silicon Transistor | |
| Fabricantes | Elite | |
| Logotipo |  |
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SS8550LT1
PNP Epitaxial Silicon Transistor
1.25W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
Collector-Emitter Voltage: VCEO= -25V
Collector Dissipation: PC=625mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
-40
-25
-6
-1500
625
150
-55~+150
V
V
V
mA
mW
oC
oC
SOT-23
Tolerance : 0.1mm
Dimensions (Unit : mm)
1. Emitter 2. Base 3. Collector
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBEF
fT
IC= -100µA, IE= 0
IC= -0.1mA, IB= 0
IE= -100µA, IC= 0
VCB= -40V, IE= 0
VCB= -20V, IB= 0
VEB= -5V, IC= 0mA
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC= -800mA, IB= -80mA
IC= -800mA, IB= -80mA
IE= -1500mA
VCE= -10V, IC= -50mA
f= 30MHz
Min
-40
-25
-6
120
40
100
Max
-0.1
-0.1
-0.1
350
-0.5
-1.2
-1.6
Unit
V
V
V
µA
µA
µA
V
V
V
MHz
hFE(1) CLASSIFICATION
Classification
L
hFE(1)
120-200
Device Marking
SS8550LT1=Y2
H
200-350
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
Part No. : SS8550LT1
Page: 1 / 1
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