Datasheet S9013LT1 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	S9013LT1	NPN Epitaxial Silicon Transistor S9013LT1 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. SOT-23 Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC=300mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emi	Elite	transistor
2	S9013LT1	Plastic Encapsulate Transistors JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT¡ª 23 S9013LT1 FEATURES 1. BASE TRANSISTOR£¨NPN £© 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 0.5 A Collector-base volta	Jiangsu Changjiang Electronics Technology	transistor
3	S9013LT1	NPN General Purpose Transistors S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 0.1 100 100 25 40 E=20 Vdc, I E= 0 ) 40 5.0 O 0.1 0.1 0.1 u u u WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)	Weitron Technology	transistor

S90 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	S9004P2CT	30A SCHOTTKY BARRIER RECTIFIER S9004P2CT 30A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter	Diodes Incorporated	rectifier
2	S9005P2CT	20A SCHOTTKY BARRIER RECTIFIER S9005P2CT 20A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverter	Diodes Incorporated	rectifier
3	S9011	NPN Transistor RoHS S9011 S9011 F EATURE Pow er dissipation P CM: TRANSISTOR (NPN) TO-92 1 . EMITTER 2. BASE 0 .31 W (Tamb=25℃) 3. COLLECTOR Co llector current I CM: 0 .03 A C ollector-base voltage V (BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: - 55℃ to +150℃ E LECTRICAL C	WEJ	transistor
4	S9011	NPN Silicon Epitaxial Planar Transistor BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z Collec tor Current.(IC= 30mA） z Power dissipation.(PC=200mW) Production specification S 9011 Pb Lead-free APPLICATIONS z AM converter, AM/FM if amplifier general purpose transistor. ORDERING INFORMATION Type No. S 9011 M	BL	transistor
5	S9012	TO-92 Plastic-Encapsulate Transistors	ETC	transistor
6	S9012	PNP General Purpose Transistors S9012 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA =25 C Junction T	Weitron Technology	transistor
7	S9012	PNP Silicon Epitaxial Planar Transistor BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA） Complementary To S9013. Excellent HFE Linearity. Production specification S9012 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION	BL	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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