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PDF MMBT3904LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT3904LT1 | |
| Descripción | NPN Transistor | |
| Fabricantes | Silicon Standard | |
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FEATURES
Power dissipation, PCM:0.2W (Tamb=25℃)
Collector current, ICM: 0.2A
Collector-base voltage, V(BR)CBO: 60V
Operating and storage junction temperature range:
TJ, Tstg: -55℃ to +150℃
SOT-23 plastic-encapsulate package
Device Marking: AM1
MMBT3904LT1
Transistors (NPN)
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO VIc= 1 mA, IB=0
Min
60
Max
40
Unit
V
V
Emitter-base breakdown voltage
V(BR)EBO IE= 100µA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 60V, IE=0
0.1 µA
Collector cut-off current
ICEO
VCE= 40V, IB=0
0.1 µA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1 µA
DC current gain
HFE(1)
VCE=10V, IC= 1mA
100
HFE(2)
VCE= 1V, IC= 50mA
60 300
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA
0.3 V
Base-emitter saturation voltage
VBE(sat) IC= 50mA, IB= 5mA
0.95 V
Transition frequency
fT
VCE= 20V, IC= 10mA
250
f=100MHz
MHz
Delay Time
td VCC=3.0Vdc,VBE=0.5Vdc
35 nS
Rise Time
tr IC=10mAdc,IB1=1.0mAdc 35 nS
Storage Time
ts VCC=3.0Vdc, IC=10mAdc 200 nS
Fall Time
tf IB1=IB2=1.0mAdc
50 nS
Note: Unless otherwise specified, these specifications apply over the operating ambient
temperature of 25℃.
12/16/2006 Rev. 1.00
www.SiliconStandard.com
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