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PDF MMBT3906LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT3906LT1 | |
| Descripción | PNP Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SOT-23 Plastic-Encapsulate Transistors
MMBT3906LT1 TRANSISTOR ( PNP)
FEATURES
·As complementary type, the NPN transistor
MMBT3904LT1 is Recommended
·Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
TJ, Tstg
Junction and Storage Temperature
Value
-40
-40
-5
-0.2
0.3
-55-150
Units
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= -100µA, IE=0
-40
Collector-emitter breakdown voltage
V(BR)CEO Ic= -1mA, IB=0
-40
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
-5
Collector cut-off current
ICBO VCB= -40 V , IE=0
Collector cut-off current
ICEO VCE= -40 V , IB=0
Emitter cut-off current
IEBO VEB= -5V , IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-10mA
VCE= -1V, IC=-50mA
100
60
Collector-emitter saturation voltage
VCE(sat) IC=-50 mA, IB=-5mA
Base-emitter saturation voltage
VBE(sat) IC=- 50 mA, IB=- 5mA
MAX
-0.1
-0.1
-0.1
300
-0.3
-0.95
UNIT
V
V
V
µA
µA
µA
V
V
Transition frequency
fT
VCE= -20V, IC= -10mA
f=100MHz
250
MHz
Delay Time
Rise Time
Storage Time
Fall Time
td VCC=-3.0V,VBE=-0.5V
tr IC=-10mA,IB1=-1.0mA
ts VCC=-3.0V,IC=-10mA
tf IB1=IB2=-1.0mA
35 nS
35 nS
225 nS
75 nS
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MMBT3906LT1.PDF ] | |
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