(PDF) MMBT5401LT1 Datasheet

Número de pieza	MMBT5401LT1
Descripción	TRANSISTOR
Fabricantes	WEJ
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No Preview Available ! RoHS MMBT5401LT1 TRANSISTOR (PNP) SOT-23 Plastic-Encapsulate Transistors Features DPower dissipation PCM : 0.3 W (Tamb=25OC) TCollector current .,LICM : -0.6A Collector-base Voltage V(BR)CBO :-160V OOperating and storage junction temperature range CTj, Tstg : -55OC to +150OC 1 1. 2.4 1.3 SOT-23 3 2 1.BASE 2.EMITTER 3.COLLECTOR IC Unit:mm NElectrical Characteristics (Tamp=25 oC unless otherwise specified) OParameter Collector-Base Breakdown Voltage RCollector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage TCollector Cut-off Current CEmitter Cut-off Current EDC Current Gain LCollector-Emitter Saturation Voltage EBase-emitter saturation voltage Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) HFE(2) HFE(3) VCE(sat) VBE(sat) fT Test Condition IC=-100 A, IE=0 IC=-1 mA, IB=0 IE=-10 A, IB=0 VCB=-120V, IE=0 VEB=-4V, IC=0mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA Min. Typ. Max. Unit -160 V -150 V -5 V -0.1 A -0.1 A 80 100 200 50 -0.5 V -1 V VCE=-20V, IC=-50mA ,f=100MHz 100 MHz WEJDevice Marking MMBT5401LT1 = 2L WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 1 page

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