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PDF IGP15N60T Data sheet ( Hoja de datos )
| Número de pieza | IGP15N60T | |
| Descripción | Low Loss IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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TrenchStop® Series
IGP15N60T
q
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3-1
Type
VCE
IC VCE(sat),Tj=25°C Tj,max
IGP15N60T 600V 15A
1.5V
175°C
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Marking Code
Package
G15T60
PG-TO-220-3-1
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Value
600
30
15
45
45
±20
5
130
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 Sep. 07
1 page  
TrenchStop® Series
IGP15N60T
q
40A
35A
30A
25A
20A
15A
VGE=20V
15V
13V
11V
9V
7V
10A
5A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
40A
35A
30A
VGE=20V
15V
25A 13V
11V
20A 9V
15A 7V
10A
5A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
35A
30A
25A
20A
15A
10A
5A
TJ=175°C
25°C
0A
0V 2V 4V 6V 8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
2.0V
IC=30A
1.5V
1.0V
IC=15A
IC=7.5A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2.2 Sep. 07
5 Page 
TrenchStop® Series
IGP15N60T
q
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
11
Figure E. Dynamic test circuit
Leakage inductance Lσ =154nH
an d Stray capacity Cσ =39pF.
Rev. 2.2 Sep. 07
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IGP15N60T.PDF ] | |
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