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Datasheet CFY25-P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CFY25-P | HiRel X-Band GaAs Low Noise / General Purpose MESFET |  Infineon Technologies AG | data |
CFY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CFY25 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q  Siemens Semiconductor Group amplifier | | |
| 2 | CFY25 | HiRel X-Band GaAs Low Noise / General Purpose MESFET Infineon Technologies AG data | | |
| 3 | CFY25-17 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q Siemens Semiconductor Group amplifier | | |
| 4 | CFY25-20 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q Siemens Semiconductor Group amplifier | | |
| 5 | CFY25-20 | HiRel X-Band GaAs Low Noise / General Purpose MESFET Infineon Technologies AG data | | |
| 6 | CFY25-20P | HiRel X-Band GaAs Low Noise / General Purpose MESFET Infineon Technologies AG data | | |
| 7 | CFY25-23 | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) GaAs FET
q q q q q
CFY 25
Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q Siemens Semiconductor Group amplifier | |
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