(PDF) CFY35-20 Datasheet - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)

Número de pieza	CFY35-20
Descripción	GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! GaAs FET CFY 35 ________________________________________________________________________________________________________ Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Pin Configuration 1234 CFY 35-20 NA Q62702-F1393 S D S G CFY 35-23 NB Q62702-F1394 Package 1) MW-4 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 53°C) 2) Symbol VDS VDG VGS ID TCh Tstg Ptot Value 5 6 -4 ... 0 60 150 -40...+150 180 Thermal resistance Channel-soldering point 2) RthChS 540 1) Dimensions see chapter Package Outlines 2) TS is measured on the source 1 lead at the soldering point to the PCB. Unit V V V mA °C °C mW K/W Siemens Aktiengesellschaft pg. 1/4 13.02.1996 HL EH PD 21 1 page

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PDF CFY35-20 Data sheet ( Hoja de datos )