|
|
|
부품번호 | CFY66-10 기능 |
|
|
기능 | HiRel K-Band GaAs Super Low Noise HEMT | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
CFY66
HiRel K-Band GaAs Super Low Noise HEMT
• HiRel Discrete and Microwave Semiconductor
• Conventional AlGaAs/GaAs HEMT
(For new design we recommend to use our
pseudo-morphic HEMT CFY67)
• For professional super low-noise amplifiers
• For frequencies from 500 MHz to > 20 GHz
• Hermetically sealed microwave package
• Super low noise figure, high associated gain
• Space Qualified
ESA/SCC Detail Spec. No.: 5613/002,
Type Variant No.s 01 to 04
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY66-08 (ql)
CFY66-08P (ql)
CFY66-10 (ql)
CFY66-10P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY66-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
on request
on request
on request
on request
Semiconductor Group
1 of 8
Draft D, September 99
Electrical Characteristics (continued)
CFY66
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Noise figure 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz
CFY66-08, -08P
NF dB
- 0.7 0.8
CFY66-10, 10P
- 0.9 1.0
Associated gain. 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz
CFY66-08, -08P
Ga dB
10.0 11.0 -
CFY66-10, 10P
9.5 10.5 -
Output power at 1 dB gain compression 2) P1dB
VDS = 2 V, ID = 20 mA, f = 12 GHz
CFY66-06, -08, -10
-
11.0 -
dBm
CFY66-08P, -10P
10.0 11.0 -
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group
4 of 8
Draft D, September 99
4페이지 Micro-X Package
CFY66
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the Infineon Technologies Companies and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
Semiconductor Group
7 of 8
Draft D, September 99
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ CFY66-10.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CFY66-10 | HiRel K-Band GaAs Super Low Noise HEMT | Infineon Technologies AG |
CFY66-10P | HiRel K-Band GaAs Super Low Noise HEMT | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |