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CFY66-10 데이터시트 PDF




Infineon Technologies AG에서 제조한 전자 부품 CFY66-10은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 CFY66-10 자료 제공

부품번호 CFY66-10 기능
기능 HiRel K-Band GaAs Super Low Noise HEMT
제조업체 Infineon Technologies AG
로고 Infineon Technologies AG 로고


CFY66-10 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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CFY66-10 데이터시트, 핀배열, 회로
CFY66
HiRel K-Band GaAs Super Low Noise HEMT
HiRel Discrete and Microwave Semiconductor
Conventional AlGaAs/GaAs HEMT
(For new design we recommend to use our
pseudo-morphic HEMT CFY67)
For professional super low-noise amplifiers
For frequencies from 500 MHz to > 20 GHz
Hermetically sealed microwave package
Super low noise figure, high associated gain
Space Qualified
ESA/SCC Detail Spec. No.: 5613/002,
Type Variant No.s 01 to 04
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY66-08 (ql)
CFY66-08P (ql)
CFY66-10 (ql)
CFY66-10P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY66-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
on request
on request
on request
on request
Semiconductor Group
1 of 8
Draft D, September 99




CFY66-10 pdf, 반도체, 판매, 대치품
Electrical Characteristics (continued)
CFY66
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Noise figure 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz
CFY66-08, -08P
NF dB
- 0.7 0.8
CFY66-10, 10P
- 0.9 1.0
Associated gain. 1)
VDS = 2 V, ID = 10 mA, f = 12 GHz
CFY66-08, -08P
Ga dB
10.0 11.0 -
CFY66-10, 10P
9.5 10.5 -
Output power at 1 dB gain compression 2) P1dB
VDS = 2 V, ID = 20 mA, f = 12 GHz
CFY66-06, -08, -10
-
11.0 -
dBm
CFY66-08P, -10P
10.0 11.0 -
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group
4 of 8
Draft D, September 99

4페이지










CFY66-10 전자부품, 판매, 대치품
Micro-X Package
CFY66
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the Infineon Technologies Companies and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
Semiconductor Group
7 of 8
Draft D, September 99

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관련 데이터시트

부품번호상세설명 및 기능제조사
CFY66-10

HiRel K-Band GaAs Super Low Noise HEMT

Infineon Technologies AG
Infineon Technologies AG
CFY66-10P

HiRel K-Band GaAs Super Low Noise HEMT

Infineon Technologies AG
Infineon Technologies AG

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