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부품번호 | CFY67-10P 기능 |
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기능 | HiRel K-Band GaAs Super Low Noise HEMT | ||
제조업체 | Infineon Technologies AG | ||
로고 | |||
CFY67
HiRel K-Band GaAs Super Low Noise HEMT
• HiRel Discrete and Microwave Semiconductor
• Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
• For professional super low-noise amplifiers
• For frequencies from 500 MHz to > 20 GHz
• Hermetically sealed microwave package
• Super low noise figure, high associated gain
• Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1699
on request
on request
Q62702F1699
Semiconductor Group
1 of 10
Draft D, September 99
Electrical Characteristics (continued)
CFY67
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Noise figure 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06
NF dB
- 0.5 0.6
CFY67-08, -08P
- 0.7 0.8
CFY67-10, 10P
- 0.9 1.0
Associated gain. 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06
Ga dB
11.5 12.5 -
CFY67-08, -08P
11.0 11.5 -
CFY67-10, 10P
10.5 11.0 -
Output power at 1 dB gain compression 2) P1dB
VDS = 2 V, ID = 20 mA, f = 12 GHz
CFY67-06, -08, -10
-
11.0 -
dBm
CFY67-08P, -10P
10.0 11.0 -
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group
4 of 10
Draft D, September 99
4페이지 Typical Common Source Noise-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50 Ω
f
NFmin
|Γopt|
<Γopt
Rn
[GHz]
[dB] [magn] [angle]
[Ω]
1 0,29 0,756 14 15,60
2 0,30 0,690 28 14,65
3 0,34 0,643 43 13,56
4 0,38 0,606 58 12,10
5 0,41 0,578 73 10,53
6
0,46 0,553
87
8,86
7
0,50
0,534
102
7,16
8
0,55
0,518
116
5,62
9
0,60
0,505
131
4,29
10
0,64
0,495
145
3,23
11
0,69
0,486
159
2,53
12
0,73
0,476
173
2,22
13
0,78 0,467 -173
2,37
14
0,84 0,455 -160
2,96
15
0,88 0,443 -146
4,01
16
0,93 0,428 -132
5,47
17
0,99 0,412 -118
7,26
18
1,05 0,394 -103
9,61
CFY67
Semiconductor Group
7 of 10
Draft D, September 99
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ CFY67-10P.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
CFY67-10 | HiRel K-Band GaAs Super Low Noise HEMT | Infineon Technologies AG |
CFY67-10P | HiRel K-Band GaAs Super Low Noise HEMT | Infineon Technologies AG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |