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PDF CS150N03A8 Data sheet ( Hoja de datos )

Número de pieza CS150N03A8
Descripción Silicon N-Channel Power MOSFET
Fabricantes Huajing 
Logotipo Huajing Logotipo



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No Preview Available ! CS150N03A8 Hoja de datos, Descripción, Manual

Silicon N-Channel Power MOSFET
CS150N03 A8
R
General Description
CS150N03 A8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by advanced trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson3.5m)
l Low Gate Charge (Typical Data:75nC)
l Low Reverse transfer capacitances(Typical:800pF)
l 100% Single Pulse avalanche energy Test
Applications
UPS,Inverter,Lighting.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25)
RDS(ON)Typ
30
150
100
2.8
Rating
30
150
120
600
±20
1300
4.0
100
0.67
55 to 175
300
V
A
W
m
Units
V
A
A
A
V
mJ
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1

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CS150N03A8 pdf
CS150N03A8
R
Figure 6 Maximum Peak Current Capability
Figure 7 Typical Transfer Characteristics
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1

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