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부품번호 | 4835 기능 |
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기능 | P-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | Tuofeng Semiconductor | ||
로고 | |||
전체 8 페이지수
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V
RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design
• Reliable and Rugged
• SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO − 8
S SS
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
DD DD
P-Channel MOSFET
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
-30
V
±25
-8
A
-50
*Surface Mounted on FR4 Board, t ≤ 10 sec.
TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
1
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.07
-ID=8A
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0 2 4 6 8 10
-VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
-VGS=10V
-ID=8A
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
10
-VDS=15V
-ID=4.6A
8
Gate Charge
6
4
2
0
0 10 20 30 40 50
QG - Gate Charge (nC)
Capacitance
4500
Frequency=1MHz
3600
Ciss
2700
1800
900 Coss
Crss
0
0 6 12 18 24 30
-VDS - Drain-to-Source Voltage (V)
4
4페이지 Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Pre-heat temperature
183°C
Peak temperature
Classification Reflow Profiles
Time
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
Preheat temperature 125 ± 25°C)
120 seconds max
Temperature maintained above 183°C
60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
Time 25°C to peak temperature
6 minutes max.
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
7
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구 성 | 총 8 페이지수 | ||
다운로드 | [ 4835.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |