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PDF 4622 Data sheet ( Hoja de datos )
| Número de pieza | 4622 | |
| Descripción | 20V Dual P + N-Channel MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4622
20V Dual P + N-Channel MOSFET
Product Summary
N-Channel
P-Channel
VDS (V) = 20V
-20V
ID = 6.4A (VGS=4.5V) -6.4A (VGS =-4.5V)
RDS(ON)
RDS(ON)
< 23mΩ (VGS=4.5V)
< 40mΩ(VGS = -4.5V)
< 30mΩ (VGS=2.5V) < 50mΩ (VGS = -2.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
S1
G1
S2
G2
D1
D1
D2
D2
D1 D2
G1 G2
S1
n-channel
S2
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±16
Continuous Drain
Current AF
TA=25°C
ID
6.4
Pulsed Drain Current B
IDM 35
Power Dissipation
TA=25°C
Avalanche Current B
Repetitive avalanche energy 0.3mH B
Junction and Storage Temperature Range
PD
IAR
EAR
TJ, TSTG
2
13
25
-55 to 150
Max p-channel
-20
±12
-6.4
-25
2
13
25
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Steady-State
t ≤ 10s
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
40
62.5
110
40
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4622
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
IDSS
IGSS
VGS(th)
ID(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=-16V, VGS=0V
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
Min Typ Max Units
-20 V
-1
±100
µA
nA
-1.3 -0.9 -0.5
-25
V
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-6.4A
VGS=-2.5V, ID=-4.5A
gFS Forward Transconductance
VDS=-5V, ID=-5A
VSD Diode Forward Voltage
IS=-1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=-10V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-4.5A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=2Ω,
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
30
40
13
-0.76
40
50
-1
-2.5
mΩ
mΩ
S
V
A
800 960
131
103
6.7 10
pF
pF
pF
Ω
15.5 nC
7.4 nC
1.3 nC
2.9 nC
4.4 ns
7.6 ns
44 ns
13.5 ns
20 ns
9 nC
A: The value of R θθJJAA is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The value
vinaaluneyingaivneynaagpipvleicnataiopnpldiceaptieonnddseopnenthdes uosnetrh'sesupseecri'fsicsbpoeacrifdicdbeosaigrnd.design. The current rating is based on the t ≤ 10s thermal resistance
rBa:tiRnge.petitive rating, pulse width limited by junction temperature.
BC:. RTheepeRtitθiJvAeisratthinegs,upmulsoef twhiedthelirmmitaeldimbpyejudnecntcioenfrtoemmpjuenractiuorne.to lead R θJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
Cth.eTrmhealRreθsJAisitsanthcee sfruommojuf nthcetiothnetromdarlaiimn pleeadde.nce from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,1a2re,1o4batareineodbtuasininegd <u3s0in0gµ8s0pµuslspeusl,sdeus,tydcuytyclcey0c.le5%0.5m%axm. ax.
E. These tests are performed with the device mounted on 1 in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev5: Nov 2010
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4622.PDF ] | |
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