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Número de pieza | AON2810 | |
Descripción | 30V Dual N-Channel AlphaMOS | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AON2810 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! AON2810
30V Dual N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 2.5V VGS
• Low Gate Charge
• ESD protection
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS=2.5V)
Typical ESD protection
30V
2A
< 44 mΩ
< 52 mΩ
< 74 mΩ
HBM Class 3A
Top View
DFN 2x2A
Bottom View
D1
S2
G2 D1
Pin 1
D2
S1
G1
D2
Pin 1
D1
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
ID
IDM
VDS Spike
100ns
VSPIKE
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±12
2
1.6
8
36
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t ≤ 10s
Steady-State
Symbol
RθJA
Typ
40
65
Max
50
80
D2
S2
Units
V
V
A
V
W
°C
Units
°C/W
°C/W
Rev.1.0: August 2013
www.aosmd.com
Page 1 of 5
1 page AON2810
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
R esistive Switching Test Circuit & W aveform s
RL
Vds
DUT
+
Vdd
VDC
-
Vgs
td(on) tr
ton
td(off)
tf
toff
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & W aveform s
Vgs
Q rr = - Idt
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev.1.0: August 2013
www.aosmd.com
Page 5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AON2810.PDF ] |
Número de pieza | Descripción | Fabricantes |
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