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PDF SSS1N60 Data sheet ( Hoja de datos )
| Número de pieza | SSS1N60 | |
| Descripción | 600V N-Channel MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS12N60
N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
主要参数 MAIN CHARACTERISTICS
ID 12 A
VDSS 600 V
Rdson（@Vgs=10V） 0.65Ω
Qg 39nC
封装 Package
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 23pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 23pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
Order codes
印记
Marking
SSS12N60
SSS12N60
封装
Package
TO-220F
无卤素
Halogen
Free
否 NO
包装
Packaging
条管 Tube
器件重量
Device
Weight
2.15 g(typ)
1/9
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS12N60
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
VGS
Top 15V
10V
8V
7V
6.5V
6V
10 5.5V
Bottom 5V
Transfer Characteristics
10
150 ℃
1
25℃
Notes:
1 1. 250μs pulse test
2. TC=25℃
1 10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
0.85
0.80 VGS=10V
0.75
0.70
0.65
0.60 VGS=20V
0.55 Note:Tj=25 ℃
0.50
0 2 4 6 8 10 12 14 16 18
ID [A]
Capacitance Characteristics
20
3x103
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
2x103
1x103
0
10-1 100 101
V DS Drain-Source Voltage [V]
10
25 ℃
1
150 ℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VS D [V]
Gate Charge Characteristics
1.4
12
VDS=480V
10
VDS=300V
8 VDS=120V
6
4
2
0
0 10 20 30 40
Qg Toltal Gate Charge [nC]
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SSS1N60.PDF ] | |
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