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PDF AO3406 Data sheet ( Hoja de datos )

Número de pieza AO3406
Descripción N-Channel Enhancement Mode Field Effect Transistor
Fabricantes Tuofeng Semiconductor　
Logotipo Tuofeng Semiconductor Logotipo



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No Preview Available ! AO3406 Hoja de datos, Descripción, Manual

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3406
AO3406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3406 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3406 is Pb-free
(meets ROHS & Sony 259 specifications). AO3406
is a Green Product ordering option. AO3406
is electrically identical.
Features
VDS (V) = 30V
ID = 3.6A (VGS = 10V)
RDS(ON) < 65mΩ (VGS = 10V)
RDS(ON) < 105mΩ (VGS = 4.5V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
3.6
2.9
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W

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