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PDF AO3415 Data sheet ( Hoja de datos )

Número de pieza AO3415
Descripción P-Channel Enhancement Mode Field Effect Transistor
Fabricantes Tuofeng Semiconductor　
Logotipo Tuofeng Semiconductor Logotipo



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No Preview Available ! AO3415 Hoja de datos, Descripción, Manual

Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3415
Rev 3: May 2004
AO3415
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3415 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. AO3415 is Pb-free (meets ROHS & Sony
259 specifications). AO3415 is a Green Product
ordering option. AO3415 is electrically identical.
Features
VDS (V) = -20V
ID = -4 A
RDS(ON) < 45mΩ (VGS = -4.5V)
RDS(ON) < 54mΩ (VGS = -2.5V)
RDS(ON) < 75mΩ (VGS = -1.8V)
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±8
-4.0
-3.5
-30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W

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