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PDF 2015 Data sheet ( Hoja de datos )
| Número de pieza | 2015 | |
| Descripción | Single P-Channel Power MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2015 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
Single P-Channel, -20V, -2.4A, Power MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.081@ VGS=4.5V
0.103@ VGS=2.5V
Descriptions
The 2015 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product 2015 is Pb-free and
Halogen-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-23
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
SOT-23
D
3
12
GS
Pin configuration (Top view)
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
2015
800
700
600
500
400
300
200
100
0
0
F=1MHZ
Ciss
Coss
Crss
2468
-V -Drain to Source Voltage(V)
DS
10
Capacitance
10
8
6
5
T=125oC
4
3
T=25oC
2
1
0
0.0 0.3 0.6 0.9 1.2 1.5
-V -Source to Drain Voltage(V)
SD
Body diode forward voltage
10
Limited by RDS(on)
1
100 μs
1 ms
10 ms
4
2 TA = 25 °C
0
0.01
0.1
1 10
Time (s)
100 1000
Single pulse power
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
BVDSS Limited
1 10
-V DS - Drain-to-Source Voltage (V)
100
Safe operating power
4.5
I =-2.7A
4.0 D
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 2 4 6 8 10
Qg (nc)
Gate Charge Characteristics
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2015.PDF ] | |
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