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부품번호 | D5N50F 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
FDD5N50F
N-Channel MOSFET, FRFET
500V, 3.5A, 1.55Ω
Features
• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
D
GD
S
D-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
Ratings
500
±30
3.5
2.1
14
257
3.5
4
4.5
40
0.3
-55 to +150
300
Ratings
1.4
110
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDD5N50F Rev. A1
1
www.fairchildsemi.com
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-75
*Notes:
1. VGS = 0V
2. ID = 250µA
-25 25 75 125
TJ, Junction Temperature [oC]
175
Figure 9. Maximum Drain Current
4
Figure 8. Maximum Safe Operating Area
30
40µs
10 100µs
1ms
10ms
1 DC
Operation in This Area
is Limited by R DS(on)
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
1000
3
2
1
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 10. Transient Thermal Response Curve
3
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 Single pulse
0.003
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
FDD5N50F Rev. A1
4 www.fairchildsemi.com
4페이지 Mechanical Dimensions
D-PAK
FDD5N50F Rev. A1
Dimensions in Millimeters
7 www.fairchildsemi.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
D5N50 | 5A N-Channel MOSFET | Alpha & Omega Semiconductors |
D5N50F | N-Channel MOSFET | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |