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부품번호 | D90N03L 기능 |
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기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 16 페이지수
STD90N03L
STD90N03L-1
N-channel 30V - 0.005Ω - 80A - DPAK/IPAK
STripFET™ III Power MOSFET
General features
Type
STD90N03L
STD90N03L-1
VDSS
30V
30V
RDS(on)
0.0057Ω
0.0057Ω
1. Pulse width limited by safe operating area
■ RDS(on)*Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device
ID
80A (1)
80A (1)
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Applications
■ Switching applications
3
2
1
IPAK
3
1
DPAK
Internal schematic diagram
Order codes
Part number
STD90N03L
STD90N03L-1
Marking
D90N03L
D90N03L-1
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
October 2006
Rev1
1/16
www.st.com
16
Electrical characteristics
2 Electrical characteristics
STD90N03L - STD90N03L-1
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250µA, VGS= 0
VDS = 30V
VDS = 30V, Tc=125°C
VGS = ±20V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 40A
VGS= 5V, ID= 40A
Min. Typ. Max. Unit
30 V
1 µA
10 µA
±100 nA
1V
0.005 0.0057 Ω
0.007 0.0011 Ω
Table 4. Dynamic
Symbol
Parameter
Ciss
Coss
Crss
Qg
Qgs
Qgd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
RG Gate input resistance
Test conditions
VDS =25V, f=1MHz,
VGS=0
VDD=15V, ID = 80A
VGS =5V
(see Figure 13)
f=1MHz Gate Bias
Bias=0 Test Signal
Level=20mV
open drain
Min. Typ. Max. Unit
2805
549
76
pF
pF
pF
22 32 nC
10 nC
7 nC
1.2 Ω
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off delay time
Fall time
Test conditions
VDD=15V, ID=40A,
RG=4.7Ω, VGS=5V
(see Figure 12)
VDD=15V, ID=40A,
RG=4.7Ω, VGS=5V
(see Figure 12)
Min. Typ. Max. Unit
19 ns
135 ns
24 ns
33 ns
4/16
4페이지 STD90N03L - STD90N03L-1
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normlaized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
7/16
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부품번호 | 상세설명 및 기능 | 제조사 |
D90N03L | N-Channel Power MOSFET / Transistor | STMicroelectronics |
D90N03L-1 | N-Channel Power MOSFET / Transistor | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |