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PDF SW75N75 Data sheet ( Hoja de datos )
| Número de pieza | SW75N75 | |
| Descripción | N-channel Enhanced mode TO-220 MOSFET | |
| Fabricantes | Samwin | |
| Logotipo |  |
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SW75N75
Features
High ruggedness
Low RDS(ON) (Typ 6mΩ)@VGS=10V
Low Gate Charge (Typ 126nC)
Improved dv/dt Capability
100% Avalanche Tested
ApplicationSynchronous Rectification,
Li Battery Protect Board, DC-DC
N-channel Enhanced mode TO-220 MOSFET
TO-220
12
3
1. Gate 2. Drain 3. Source
BVDSS : 75V
ID : 75A
RDS(ON) : 6mΩ
2
1
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
3
Order Codes
Item Sales Type
1 SW P 75N75
Marking
SW 75N75
Package
TO-220
Packaging
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to source voltage
Continuous drain current (@TC=25oC)
Continuous drain current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to source voltage
Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating factor above 25oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc Thermal resistance, Junction to case
Rthja Thermal resistance, Junction to ambient
Value
75
75*
47.3*
28
±30
1004
45
7
312
2.5
-55 ~ + 150
300
Value
0.4
60
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
1/6
1 page  
Fig. 10. Switching time test circuit & waveform
SW75N75
10VIN
RL
VDS
RGS DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 11. Unclamped Inductive switching test circuit & waveform
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT + VDS
VGS (DRIVER)
10V
10VGS
-
IS
L
VDS
RG
Same type
as DUT
*. dv/dt controlled by RG
*. Is controlled by pulse period
IS (DUT)
VDD
VDS (DUT)
di/dt
IRM
Diode reverse current
Diode recovery dv/dt
VF VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW75N75.PDF ] | |
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