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PDF MTN4N65CI3 Data sheet ( Hoja de datos )
| Número de pieza | MTN4N65CI3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTN4N65CI3 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C080I3
Issued Date : 2016.07.19
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTN4N65CI3
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
Features
RDS(ON)@VGS=10V, ID=2A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free Lead Plating and Halogen-free Package
650V
4A
2.4A
1.8Ω(typ)
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
MTN4N65CI3
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
MTN4N65CI3-0-UA-G
Package
TO-251
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTN4N65CI3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C080I3
Issued Date : 2016.07.19
Revised Date :
Page No. : 5/10
Capacitance vs Reverse Voltage
1000
Ciss
Coss
100
f=1MHz
Crss
10
0 5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Maximum Safe Operating Area
100
10 RDS(ON)
Limited
1
10μs
100μs
1ms
10ms
100ms
0.1
TC=25°C, Tj=150°C, VGS=10V,
RθJC=2.6°C/W, single pulse
DC
0.01
1
10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5 VGS=10V, RθJC=2.6°C/W
0.0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
Static Drain-Source On-resistance vs Ambient Temperature
2.8
2.4 ID=2A,
VGS=10V
2.0
1.6
1.2
0.8
0.4 RDSON@Tj=25°C : 2Ω typ.
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Gate Charge Characteristics
10
VDS=130V
8
VDS=325V
6
4 VDS=520V
2
ID=4A
0
0 4 8 12 16 20
Qg, Total Gate Charge(nC)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
0.4 ID=250μA
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN4N65CI3
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTN4N65CI3.PDF ] | |
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