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PDF FI4019HG Data sheet ( Hoja de datos )
| Número de pieza | FI4019HG | |
| Descripción | Digital Audio MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FI4019HG (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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PD - 96274
IRFI4019HG-117P
DIGITAL AUDIO MOSFET
Features
Integrated Half-Bridge Package
Reduces the Part Count by Half
Facilitates Better PCB Layout
Key Parameters Optimized for Class-D
Audio Amplifier Applications
Low RDS(ON) for Improved Efficiency
Low Qg and Qsw for Better THD and
Improved Efficiency
Low Qrr for Better THD and Lower EMI
Can Delivery up to 200W per Channel into
8Ω Load in Half-Bridge Configuration
Amplifier
Lead-Free Package
Halogen-Free
hKey Parameters
VDS
RDS(ON) typ. @ 10V
Qg typ.
Qsw typ.
RG(int) typ.
TJ max
150
80
13
4.1
2.5
150
V
m:
nC
nC
Ω
°C
D1
G1
S1/D2
G2
S2
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
device for Class D audio amplifier applications.
hAbsolute Maximum Ratings
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
EAS
PD @TC = 25°C
PD @TC = 100°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
dSingle Pulse Avalanche Energy
fPower Dissipation
fPower Dissipation
Max.
150
±20
8.7
6.2
34
77
18
7.2
Units
V
A
mJ
W
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
hThermal Resistance
0.15
-55 to + 150
300
x x10lb in (1.1N m)
W/°C
°C
Parameter
fRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
Notes through are on page 2
www.irf.com
Typ.
–––
–––
Max.
6.9
65
Units
1
10/08/09
1 page  
0.5
ID = 5.2A
0.4
0.3
0.2
0.1
0.0
4
TJ = 125°C
TJ = 25°C
56789
VGS, Gate-to-Source Voltage (V)
10
Fig 12. On-Resistance Vs. Gate Voltage
IRFI4019HG-117P
350
ID
300 TOP 0.91A
1.1A
250 BOTTOM 5.2A
200
150
100
50
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
-
RG
Circuit Layout Considerations
• Low Stray Inductance
-
• Ground Plane
• Low Leakage Inductance
Current Transformer
- +
*
• dv/dt controlled by RG
• Driver same type as D.U.T.
VDD
** +
• ISD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
V*G*S*=10V
VDD
ISD
Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
www.irf.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FI4019HG.PDF ] | |
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