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부품번호 | CGY181 기능 |
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기능 | GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) | ||
제조업체 | Siemens Semiconductor Group | ||
로고 | |||
전체 14 페이지수
GaAs MMIC
CGY 181
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Preliminary Datasheet
* Power amplifier for PCN/PCS applications
* Fully integrated 2 stage amplifier
* Operating voltage range: 2.7 to 6 V
* Overall power added efficiency 35 %
* Input matched to 50 Ω, simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CGY 181
Marking
CGY 181
Ordering code
(8-mm taped)
Q68000-A8883
Package 1)
MW 12
Maximum ratings
Characteristics
Positive supply voltage
Negative supply voltage 2)
Supply current
Channel temperature
Storage temperature
RF input power
Total power dissipation (Ts ≤ 81 °C)
Ts: Temperature at soldering point
Symbol
VD
VG
ID
TCh
Tstg
Pin
Ptot
max. Value
9
-8
2
150
-55...+150
25
5
Thermal Resistance
Channel-soldering point
RthChS
≤14
1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines
2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR ≠ 0V
Unit
V
V
A
°C
°C
dBm
W
K/W
Siemens Aktiengesellschaft
pg. 1/14
01.02.96
HL EH PD 21
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
DC-ID(VG) characteristics - typical values of stage 1, VD=3V
High current
Medium current
Low current
1,2
1
0,8
0,6
0,4
0,2
0
-5 -4,5 -4 -3,5 -3 -2,5 -2 -1,5 -1 -0,5 0
VG [V]
DC-Output characteristics - typical values of stage 1
0,8
VG=-0.25 V
0,7
-0.50 V
0,6
-0.75 V
Ptot=1.25 W
0,5
-1.00 V
0,4 -1.25 V
0,3 -1.50 V
-1.75 V
0,2
-2.00 V
0,1
-2.25 V
0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6
VD [V]
Pin 2 ( VTR ) has to be open during measuring DC-characteristics!
Siemens Aktiengesellschaft
pg. 4/14
01.02.96
HL EH PD 21
4페이지 GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Output power at different temperatures
(VD=3.6V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
33
32
31
30
29
28
27
26
25
24
23
22
21 T=-20°C
20 T=+20°C
19 T=+70°C
18
17
16
15
14
-6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
Pin [dBm]
Power added efficiency at different temperatures
( VD=3.6V,VG=-4V,f=1.75GHz,pulsed with a duty cycle of 10%, ton=0.33ms)
45
40
35
30
25
20
T=-20°C
15 T=+20°C
T=+70°C
10
5
0
-6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
Pin [dBm]
Siemens Aktiengesellschaft
pg. 7/14
01.02.96
HL EH PD 21
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ CGY181.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CGY180 | GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) | Siemens Semiconductor Group |
CGY181 | GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) | Siemens Semiconductor Group |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |