CGY2030M Datasheet PDF - NXP Semiconductors
| Part Number | CGY2030M | |
| Description | DECT 500 mW power amplifier | |
| Manufacturers | NXP Semiconductors | |
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INTEGRATED CIRCUITS
DATA SHEET
CGY2030M
DECT 500 mW power amplifier
Product specification
Supersedes data of 1996 Jul 12
File under Integrated Circuits, IC17
1997 Jan 17
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Philips Semiconductors
DECT 500 mW power amplifier
Product specification
CGY2030M
AC CHARACTERISTICS
VDD = 3.2 V; fRF = 1900 MHz; Pi = 0 dBm; Tamb = 25 °C; duty factor δ = 25%; 50 Ω impedance system; measured and
guaranteed on CGY2030M evaluation board (see Fig.4).
SYMBOL
PARAMETER
CONDITIONS MIN. TYP.
Pi input power
δ duty factor
note 1
−3 −
−−
fRF operating frequency
− 1900
Measured in mode 1; without negative biasing; VGG1 and VGG2 connected to ground
Po output power
η efficiency
26 27
− 40
Pleak
H2, H3
Stab
RF leakage to output in power off state
second and third harmonics level
stability (spurious levels)
VDD = 0 V
note 2
− −40
− −35
− −60
MAX.
+5
25
−
28.5
−
−
−
−
UNIT
dBm
%
MHz
dBm
%
dBm
dBc
dBc
Measured in mode 2; with negative biasing at pins VGG1 and VGG2
Po output power
η efficiency
Pleak
RF leakage to output in power off state
VDD = 0 V
25.5 26.5 28
− 35 −
− −50 −
dBm
%
dBm
Notes
1. Self biasing guaranteed in mode 1 at minimum input power (−3 dBm) and minimum supply voltage VDD (2.6 V).
2. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1
load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees
during a 60 seconds test period.
1997 Jan 17
handbook,3h2alfpage
Po
(dBm)
28
Po
MGG165
650
IDD
(mA)
550
24 450
IDD
20 350
2345
VDD (V)
Fig.3 Typical power and current characteristics in mode 1.
5
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| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CGY2030M.PDF Datasheet ] | |
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