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부품번호 | CGY2105 기능 |
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기능 | High dynamic range dual LNA MMIC | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 16 페이지수
INTEGRATED CIRCUITS
DATA SHEET
CGY2105ATS
High dynamic range dual LNA
MMIC
Preliminary specification
File under Integrated Circuits, IC17
1999 Dec 23
Philips Semiconductors
High dynamic range dual LNA MMIC
Preliminary specification
CGY2105ATS
CHARACTERISTICS
Tamb = 25 °C; measured and guaranteed only for the application shown in Chapter “Application and test information”;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supplies
Isupply
Ineg
positive supply current (for each LNA)
negative supply current (for each LNA)
Vsupply = 5.0 V;
Vneg = −5.0 V
Vsupply = 5.0 V;
Vneg = −5.0 V
42 58
− 0.3
Amplifiers: Vsupply = 5.0 V; Vneg = −5.0 V; Z0 = 50 Ω; both LNAs biased; duty cycle 100%
fi
G
∆G(T)
NF
input frequency
gain
gain variation with temperature
noise figure
fi = 1710 MHz
fi = 1710 to 1910 MHz
−40 °C < Tamb < +85 °C
1 710
16
14.8
−
−
−
16.9
16.3
±0.45
0.55
∆NF(T)
IP3i
∆IP3i(T)
noise figure variation with temperature
input third-order intercept point
input third-order intercept point
variation with temperature
−40 °C < Tamb < +85 °C
∆f = ±0.5 MHz
−40 °C < Tamb < +85 °C
−
11
−
±0.25
13.5
±0.45
ISOr
ISOi
s11
s22
reverse isolation
isolation between inputs
input reflection coefficient
output reflection coefficient
50 Ω source
50 Ω load
18 20
21 23
− −8.5
− −22
72
0.4
1 910
17.8
17.8
−
0.8
−
−
−
−
−
−
−
mA
mA
MHz
dB
dB
dB
dB
dB
dBm
dB
dB
dB
dB
dB
1999 Dec 23
4
4페이지 Philips Semiconductors
High dynamic range dual LNA MMIC
Preliminary specification
CGY2105ATS
Table 1 List of components; see Figs 3 and 4
COMPONENT
C1, C2
C3, C4
C5, C6
R1, R2
R3, R4
R5, R6
L1, L2
DESCRIPTION
VALUE
decoupling capacitor 1 nF
decoupling capacitor 47 pF
decoupling capacitor 47 pF
drain biasing resistor 39 Ω
gate biasing resistor 15 kΩ
gate biasing resistor 10 kΩ
drain biasing inductor 18 nH
REFERENCE
Philips; NPO, 0603
Philips; NPO, 0603
Philips; NPO, 0603
Philips; XR7, 0805
Philips; 0603
Philips; 0603
Coilcraft; 0603
Table 2 Transmission lines; see Figs 3 and 4
COMPONENT
TRL1, TRL2
TRL3, TRL4
TRL5, TRL6
100 Ω
100 Ω
100 Ω
Z0
LENGTH IN λ
0.08λ at 1800 MHz
0.08λ at 1800 MHz
0.08λ at 1800 MHz
LENGTH IN mm(1)
10 mm
4 mm
3.4 mm
WIDTH IN mm(1)
0.25 mm
0.80 mm
0.80 mm
Note
1. Transmission line lengths and widths in mm are valid for a double sided PCB; thickness of 0.8 mm in FR4 material
(ε = 4.7).
1999 Dec 23
7
7페이지 | |||
구 성 | 총 16 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CGY2105 | High dynamic range dual LNA MMIC | NXP Semiconductors |
CGY2105ATS | High dynamic range dual LNA MMIC | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |