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2N6788U 데이터시트 PDF




Microsemi에서 제조한 전자 부품 2N6788U은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 2N6788U 기능
기능 N-CHANNEL MOSFET
제조업체 Microsemi
로고 Microsemi 로고


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2N6788U 데이터시트, 핀배열, 회로
2N6788U and 2N6790U
Compliant
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/555
DESCRIPTION
These 2N6788U and 2N6790U devices are military qualified up to a JANTXV level for high-
reliability applications. Microsemi also offers numerous other products to meet higher and
lower power voltage regulation applications.
Qualified Levels:
JAN, JANTX, and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
Surface mount equivalent of JEDEC registered 2N6788 and 2N6790 numbers.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/555.
RoHS compliant by design.
APPLICATIONS / BENEFITS
High frequency operation.
Lightweight, low-profile package.
ESD rated to class 1A.
MAXIMUM RATINGS @ TC = +25 °C unless otherwise noted
U-18 LCC
Package
Also available in:
TO-205AF Package
(leaded)
2N6788 & 2N6790
Parameters / Test Conditions
Symbol
Value
Unit
Junction & Storage Temperature
Thermal Resistance Junction-to-Case (see Figure 1)
Total Power Dissipation (1)
Drain to Gate Voltage
2N6788U
2N6790U
Drain – Source Voltage
2N6788U
2N6790U
Gate – Source Voltage
Drain Current, dc @ TC = +25 °C (2)
(see Figure ?)
2N6788U
2N6790U
Drain Current, dc @ TC = +100 °C
Off-State Current (3)
2N6788U
2N6790U
2N6788U
2N6790U
Source Current
2N6788U
2N6790U
TJ, Tstg
R ӨJC
PT
V DG
V DS
V GS
I D1
I D2
I DM
IS
-55 to +150
8.93
0.8
100
200
100
200
± 20
4.5
2.8
2.8
1.8
18
11
4.5
2.8
°C
ºC/W
W
V
V
V
A
A
A (pk)
A
Notes: 1. Derated linearly by 0.11 W/°C for TC > +25 °C.
2. The following formula derives the maximum theoretical ID limit. ID is also limited by package and internal
wires and may be limited due to pin diameter.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
3. IDM = 4 x ID1; ID1 as calculated in note 2.
Website:
www.microsemi.com
T4-LDS-0164-1, Rev. 1 (121482)
©2012 Microsemi Corporation
Page 1 of 8




2N6788U pdf, 반도체, 판매, 대치품
2N6788U and 2N6790U
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
Gate to Source Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
Gate to Drain Charge
VGS = 10 V, ID = 6.0 A, VDS = 50 V
VGS = 10 V, ID = 3.5 A, VDS = 100 V
Symbol Min. Max. Unit
2N6788U
2N6790U
2N6788U
2N6790U
2N6788U
2N6790U
Q g(on)
Q gs
Q gd
18.0
14.3
nC
4.0
3.0
nC
9.0
9.0
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
ID = 6.0 A, VGS = 10 V, RG = 7.5 , VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 , VDD = 74 V
Rinse time
ID = 6.0 A, VGS = 10 V, RG = 7.5 , VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 , VDD = 74 V
Turn-off delay time
ID = 6.0 A, VGS = 10 V, RG = 7.5 , VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 , VDD = 74 V
Fall time
ID = 6.0 A, VGS = 10 V, RG = 7.5 , VDD = 35 V
ID = 3.5 A, VGS = 10 V, RG = 7.5 , VDD = 74 V
Diode Reverse Recovery Time
di/dt = 100 A/µs, VDD ≤ 50 V, IF = 6.0 A
di/dt = 100 A/µs, VDD ≤ 50 V, IF = 3.5 A
Symbol
2N6788U
2N6790U
t d(on)
2N6788U
2N6790U
tr
2N6788U
2N6790U
t d(off)
2N6788U
2N6790U
tf
2N6788U
2N6790U
t rr
Min.
Max. Unit
40 ns
70
50
ns
40
50
ns
70
50
ns
240
400
ns
T4-LDS-0164-1, Rev. 1 (121482)
©2012 Microsemi Corporation
Page 4 of 8

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2N6788U 전자부품, 판매, 대치품
2N6788U and 2N6790U
PACKAGE DIMENSIONS
T4-LDS-0164-1, Rev. 1 (121482)
Dimensions
Ltr Inches
Millimeters
Min Max Min Max
BL .345 .360 8.77 9.14
BW .280 .295 7.12 7.49
CH .095 .115 2.42 2.92
LL1 .040 .055 1.02 1.39
LL2 .055 .065 1.40 1.65
LS .050 BSC
1.27 BSC
LS1 .025 BSC
0.635 BSC
LS2 .008 BSC
0.203 BSC
LW .020 .030 0.51 0.76
Q1 .105 REF
2.67 REF
Q2 .120 REF
3.05 REF
Q3 .045 .055 1.14 1.40
TL .070 .080 1.78 2.03
TW .120 .130 3.05 3.30
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general
information only.
3. In accordance with ASME Y14.5M,
diameters are equivalent to Φx
symbology.
©2012 Microsemi Corporation
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