Datasheet EDI88512C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	EDI88512C	512Kx8 Monolithic SRAM EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static  Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function (LP version) • TTL Compatible Inputs and Outputs • Fully Static, No Clocks  32 lead JEDEC Approved Evolutionary Pinout �	Microsemi	ram
2	EDI88512CA	512Kx8 Monolithic SRAM EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns  Data Retention Function (LPA version)  TTL Compatible Inputs and Outputs  Fully Static, No Clocks  Organized as 512Kx8  Commercial, Industrial and Military	Microsemi	ram
3	EDI88512CA	512Kx8 Monolithic SRAM/ SMD 5962-95600 EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES ■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ Data Retention Function (LPA version) ■ TTL Compatible Inputs and Outputs ■ Fully Static, No Clocks ■ Organized as 512Kx8 ■ Commercial, Industrial and Military Temperature Ranges	ETC	ram
4	EDI88512CA-XMXG	512Kx8 Plastic Monolithic SRAM CMOS EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS FEATURES  512Kx8 bit CMOS Static  Random Access Memory • Access Times of 17, 20, 25ns • Data Retention Function (LPA version) • Extended Temperature Testing • Data Retention Functionality Testing  36 lead	Microsemi	ram

EDI Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	EDI2AG272128V-D1	2 Megabyte Sync/Sync Burst White Electronic Designs EDI2AG272128V-D1 ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear Burst Mode Clock Controlled Registered Bank Enables (E1#, E2#) Clock Controlled Byte Write Mode	White Electronic	data
2	EDI2AG272129V	2 Megabyte Sync/Sync Burst White Electronic Designs EDI2AG272129V ADVANCED* 2 Megabyte Sync/Sync Burst, Small Outline DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Sequential Burst MODE Clock Controlled Registered Bank Enables (E1#, E2#) Clock Controlled Byte Write Mod	White Electronic	data
3	EDI2CG272128V	Sync/Sync Burst SRAM SO-DIMM White Electronic Designs EDI2CG272128V ADVANCED* 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM FEATURES 2x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Access Speed(s): TKHQV = 8.5, 9, 12, 15ns Clock Controlled	White Electronic	ram
4	EDI2CG472128V	4 Megabyte Sync/Sync Burst White Electronic Designs 4 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES 4x128Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Clock Controlled Registered Module Enable (EM#) Clock Controlled Registered Bank Enable	White Electronic	data
5	EDI2CG472256V	8 Megabyte Sync/Sync Burst White Electronic Designs 8 Megabyte Sync/Sync Burst, Dual Key DIMM FEATURES 4x256Kx72 Synchronous, Synchronous Burst Flow-Through Architecture Linear and Sequential Burst Support via MODE pin Clock Controlled Registered Module Enable (EM#) Clock Controlled Registered Bank Enable	White Electronic	data
6	EDI2DL32256V	256Kx32 Synchronous Pipline Burst SRAM EDI2DL32256V 256Kx32 Synchronous Pipline Burst SRAM 3.3V FEATURES s tKHQV times of 3.5, 3.8 and 4.0ns s 166, 150 and 133 MHz clock speed s DSP Memory Solution • Texas Instruments’ TMS320C6201 • Texas Instruments’ TMS320C67x s Package: • 119 pin BGA, JEDEC MO-163 s 3.3	White Electronic	ram
7	EDI2GG464128V	4MB SYNCHRONOUS CARD EDGE DIMM White Electronic Designs 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES 4x128Kx64 Synchronous Access Speed(s): TKHQV = 9.5, 10, 11, 12, 15ns Flow-Through Architecture Clock Controlled Registered Bank Enables (E1#, E2#, E3#, E4#) Clock Controlled Registered Address Clock Controlled Regi	White Electronic	data

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Número de pieza	Descripción	Fabricantes	PDF
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