DataSheet.es    


PDF ME8107-G Data sheet ( Hoja de datos )

Número de pieza ME8107-G
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes Matsuki 
Logotipo Matsuki Logotipo



Hay una vista previa y un enlace de descarga de ME8107-G (archivo pdf) en la parte inferior de esta página.


Total 5 Páginas

No Preview Available ! ME8107-G Hoja de datos, Descripción, Manual

ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
GENERAL DESCRIPTION
The ME8107 is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
FEATURES
RDS(ON)7.2m@VGS=-10V
RDS(ON)12m@VGS=-4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
LCD Display inverter
e Ordering Information: ME8107(Pb-free)
ME8107-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation*
Operating Junction Temperature
TA=25
TA=70
TA=25
TA=70
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
-35
±20
-13
-10
-52
2
1.3
-55 to 150
62.5
* The device mounted on 1in2 FR4 board with 2 oz copper
1.2
Mar, 2012-Ver1.3
Unit
V
V
A
A
W
℃/W
01

1 page




ME8107-G pdf
ME8107/ME8107-G
P-Channel Enhancement Mode MOSFET, ESD Protected
SOP-8 Package Outline
MILLIMETERS (mm)
DIM
MIN MAX
A 1.35 1.75
A1 0.10
0.25
B 0.35 0.49
C 0.18 0.25
D 4.80 5.00
E 3.80 4.00
e 1.27 BSC
H 5.80 6.20
L 0.40 1.25
θ 0°
7°
Note: 1. Refer to JEDEC MS-012AA.
2. Dimension “D” does not include mold flash, protrusions
or gate burrs . Mold flash, protrusions or gate burrs shall not
exceed 0.15 mm per side.
1.2
Mar, 2012-Ver1.3
05

5 Page










PáginasTotal 5 Páginas
PDF Descargar[ Datasheet ME8107-G.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
ME8107-GP-Channel Enhancement Mode MOSFETMatsuki
Matsuki

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar