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부품번호 | 6N60F 기능 |
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기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | nELL | ||
로고 | |||
전체 10 페이지수
SEMICONDUCTOR
6N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(6A, 600Volts)
DESCRIPTION
The Nell 6N60 is a three-terminal silicon
device with current conduction capability
of 6A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 1.5Ω@VGS = 10V
Ultra low gate charge(25nC max.)
Low reverse transfer capacitance
(CRSS = 10pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-251 (I-PAK)
(6N60F)
D
D
G
S
TO-252 (D-PAK)
(6N60G)
GDS
TO-220AB
(6N60A)
GDS
TO-220F
(6N60AF)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
6
600
1.5 @ VGS = 10V
25
D (Drain)
G
(Gate)
S (Source)
www.nellsemi.com
Page 1 of 10
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
6 = 6A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
F = TO-251(I-PAK)
G = TO-252(D-PAK)
6N60 Series RRooHHSS
Nell High Power Products
6 N 60 A
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 4 of 10
4페이지 SEMICONDUCTOR
■ TYPICAL CHARACTERISTICS
Fig.7 Breakdown voltage variation vs.
Temperature
1.2
1.1
1.0
0.9
0.8
-100
-50
0
Note:
1. VGS = 0V
2. lD = 250µA
50 100 150 200
Junction temperature, Tj (°C)
6N60 Series RRooHHSS
Nell High Power Products
Fig.8 On-Resistance variation vs. junction
temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-50
0
Note:
1. VGS = 10V
2. lD = 3A
50 100 150 200
Junction-Temperature, TJ (°C)
Fig.9-1 Maximum Safe operating area
(for 6N60A)
Operation in This Area is Limited by RDS(ON)
101 100µs
1ms
10ms
10ms
100
DC
10-1
Note:
1. TJ = 25°C
2. TJ = 150°C
3. Single Pulse
10-2
100
101
102
Drain-Source voltage, VDS (V)
103
Fig.9-2 Maximum Safe operating area
(for 6N60AF)
Operation in This Area is Limited by RDS(ON)
10µs
101 100µs
1ms
10ms
100 DC
10-1
10-2
100
Note:
1. TJ = 25°C
2. TJ = 150°C
3. Single Pulse
101
102
Drain-Source voltage, VDS (V)
103
Fig.9-3 Maximum Safe operating area
(for 6N60F/6N60G)
102
Operation in This Area is Limited by RDS(ON)
10µs
101
100µs
100
10-1
100
Note:
1. TJ = 25°C
2. TJ = 150°C
3. Single Pulse
101
1ms
10ms
DC
102
103
Drain-Source voltage, VDS (V)
Fig.10 Maximum drain current vs. case
temperature
6
5
4
3
2
1
0
25 50 75 100 125 150
Case temperature, TC (°C)
www.nellsemi.com
Page 7 of 10
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ 6N60F.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
6N60 | N-CHANNEL MOSFET | CHONGQING PINGYANG |
6N60 | 600V N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |