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PDF MDP6N60 Data sheet ( Hoja de datos )

Número de pieza MDP6N60
Descripción N-Channel MOSFET
Fabricantes MagnaChip 
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No Preview Available ! MDP6N60 Hoja de datos, Descripción, Manual

MDP6N60/MDF6N60
N-Channel MOSFET 600V, 6A, 1.4
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 6.0A
RDS(ON) ≤ 1.4Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
G
S`
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP6N60 MDF6N60
600
±30
6.0 6.0*
3.8 3.8*
24 24*
131 37.9
1.05 0.3
13.1
4.5
220
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
MDP6N60
62.5
0.95
MDF6N60
62.5
3.3
Unit
oC/W
Feb. 2009 Version 1.3
1 MagnaChip Semiconductor Ltd.

1 page




MDP6N60 pdf
16000
14000
12000
single Pulse
RthJC = 0.95/W
TC = 25
10000
8000
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
Pulse Width (s)
1
Fig.13 Single Pulse Maximum Power
Dissipation MDP6N60(TO-220)
10
12000
10000
8000
single Pulse
RthJC = 3.3/W
TC = 25
6000
4000
2000
0
1E-5 1E-4 1E-3 0.01
0.1
1
10
Pulse Width (s)
Fig.14 Single Pulse Maximum Power
Dissipation MDF6N60(TO-220F)
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature []
Fig.15 Maximum Drain Current vs. Case
Temperature
Feb. 2009 Version 1.3
5 MagnaChip Semiconductor Ltd.

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