2N6661JANTX Datasheet PDF - Vishay
| Part Number | 2N6661JANTX | |
| Description | N-Channel 90 V (D-S) MOSFET | |
| Manufacturers | Vishay | |
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2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 90 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
Configuration
90
4
Single
TO-205AD
(TO-39)
S
1
2
G
3
D
Top View
ORDERING INFORMATION
PART
2N6661
2N6661-2
2N6661JANTX
2N6661JANTXV
PACKAGE
TO-205AD
(TO-39)
FEATURES
• Military Qualified
• Low On-Resistence: 3.6
• Low Threshold: 1.6 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 6 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
DESCRIPTION/DSCC
PART NUMBER
Commercial
Commercial, Lead (Pb)-free
wwSwee.v-is2hFalyo.wcoDmo/cduomc?e6n7t884
JANTX2N6661 (std Au leads)
JANTX2N6661 (with solder)
JANTX2N6661P (with PIND)
JANTXV2N6661 (std Au leads)
JANTXV2N6661P (with PIND)
VISHAY ORDERING
PART NUMBER
2N6661
2N6661-E3
2N6661-2
2N6661JTX02
2N6661JTXL02
2N6661JTXP02
2N6661JTXV02
2N6661JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Thermal Resistance, Junction-to-Ambientb
RthJA
Thermal Resistance, Junction-to-Case
RthJC
Operating Junction and Storage Temperature Range
TJ, Tstg
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
LIMIT
90
± 20
0.86
0.54
3
6.25
0.725
170
20
- 55 to 150
UNIT
V
A
W
°C/W
°C
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Package Information
Vishay Siliconix
TO-205AD (TO-39 TALL LID)
QP
L1
L2
∝
CL
TW
TL
r
CD
CH
LU
LL
Seating
Plane
INCHES
MILLIMETERS
Dim Min
Max
Min
Max
CD 0.305 0.335
7.75
8.51
CH 0.240 0.260
6.10
6.60
HD 0.335 0.370
8.51
9.40
LC 0.200 TP
5.08 TP
LD 0.016 0.021
0.41
0.53
LL
0.500
0.750
12.70
19.05
LU 0.016 0.019
0.41
0.48
L1 — 0.050 —
1.27
L2 0.250
—
6.35
—
P 0.100
—
2.54
—
Q
— 0.050
—
1.27
r
— 0.010
—
0.25
TL 0.029 0.045
0.74
1.14
TW 0.028 0.034
0.71
0.86
m 45_ TP
Dimensions (see notes 1, 2, 9, 11, 12)
45_ TP
ECN: S-40373—Rev. C, 15-Mar-04
DWG: 5511
Notes
6
7, 8
7, 8
7, 8
7, 8
7, 8
5
4
9
3
2
6
LD
HD
12
3
LC
NOTES:
1. Dimensions are in inches. Metric equivalents are given for general
information only.
2. Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011
(0.028 mm).
3. Dimension TL measured from maximum HD.
4. Outline in this zone is not controlled.
5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This
zone is controlled for automatic handling.
6. Leads at guage plane 0.054+0.001, −0.000 (1.37+0.03, −0.00 mm) below
seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at
maximum material condition (MMC) relative to tab at MMC.
7. LU applies between L1 and L2, LD applies between L2 and L maximum.
Diameter is uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. Radius (r) applies to both inside corners of tab.
10. Drain is electrically connected to the case.
Document Number: 71367
09-Mar-04
www.vishay.com
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| Part Number | Description | MFRS |
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| 2N6661JANTXV | The function is N-Channel 90 V (D-S) MOSFET. Vishay | |
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