Datasheet 2N6661 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2N6661	N-Channel Enhancement-Mode Vertical DMOS FET 2N6661 N-Channel, Enhancement-Mode, Vertical DMOS FET Features • Free from secondary breakdown • Low power drive requirement • Ease of paralleling • Low CISS and fast switching speeds • Excellent thermal stability • Integral source-drain diode • High input impedance and high gain Appl	Microchip	data
2	2N6661	N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available ABSOLUTE MAXIMUM	Seme LAB	mosfet
3	2N6661	N-Channel Enhancement-Mode Vertical DMOS FETs	Supertex Inc	data
4	2N6661	TMOS SWITCHING FET TRANSISTORS 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, high- speed power switching applications such as switching power sup- plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,interfa	Motorola Inc	transistor
5	2N6661	N-Channel 90 V (D-S) MOSFET 2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV www.vishay.com Vishay Siliconix N-Channel 90 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V Configuration 90 4 Single TO-205AD (TO-39) S 1 2 G 3 D Top View ORDERING INFORMATION PART 2N6661 2N6661-2 2N6661JANTX 2N6661JANTXV P	Vishay Siliconix	mosfet

2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2N60	N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact	Unisonic Technologies	mosfet
2	2N60-E	N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.	Unisonic Technologies	mosfet
3	2N6008	Series 2N Transistors	Sprague	transistor
4	2N6009	Series 2N Transistors	Sprague	transistor
5	2N6010	Silicon Transistors	Semiconductor	transistor
6	2N6027	SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte	Central Semiconductor	transistor
7	2N6027	Programmable Unijunction Transistor 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge	ON Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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