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BCP56-16T3G 데이터시트 PDF




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부품번호 BCP56-16T3G 기능
기능 NPN Silicon Epitaxial Transistor
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BCP56-16T3G 데이터시트, 핀배열, 회로
BCP56 Series
NPN Silicon
Epitaxial Transistor
These NPN Silicon Epitaxial transistors are designed for use in
audio amplifier applications. The device is housed in the SOT−223
package, which is designed for medium power surface mount
applications.
Features
High Current: 1.0 A
The SOT−223 package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BCP56T1G to Order the 7 inch/1000 Unit Reel
Use BCP56T3G to Order the 13 inch/4000 Unit Reel
PNP Complement is BCP53T1G
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
80 Vdc
100 Vdc
5 Vdc
1 Adc
1.5 W
12 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg − 65 to 150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
(surface mounted)
RqJA
83.3
°C/W
Maximum Temperature for
Soldering Purposes
Time in Solder Bath
TL
260 °C
10 Sec
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.
www.onsemi.com
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
4
123
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
AYW
XXXXXG
G
1
XXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 12
1
Publication Order Number:
BCP56T1/D




BCP56-16T3G pdf, 반도체, 판매, 대치품
BCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1.1 VCE = 2 V
1.0
0.9 −55°C
0.8
25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector
Current
1.0
0.8
0.6
IC = 10 mA
50
mA
100 mA
0.4
TJ = 25°C
250 mA 500 mA
0.2
0
0.05 0.1 0.2
0.5 1.0 2.0 5.0
IB, BASE CURRENT (mA)
10 20
Figure 7. Collector Saturation Region
50
1
1 S 1 mS
100 mS
10 mS
0.1
0.01
0.1
1 10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 8. Safe Operating Area
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
TA, AMBIENT TEMPERATURE (°C)
Figure 9. Power Derating Curve
www.onsemi.com
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부품번호상세설명 및 기능제조사
BCP56-16T3G

NPN Silicon Epitaxial Transistor

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