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What is BUW12F?

This electronic component, produced by the manufacturer "Inchange Semiconductor", performs the same function as "Silicon NPN Power Transistor".


BUW12F Datasheet PDF - Inchange Semiconductor

Part Number BUW12F
Description Silicon NPN Power Transistor
Manufacturers Inchange Semiconductor 
Logo Inchange Semiconductor Logo 


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No Preview Available ! BUW12F datasheet, circuit

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUW12F
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max.)@IC= 6A
·High Speed Switching
APPLICATIONS
·Designed for high voltage, fast switching industrial
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
850 V
VCEO Collector-Emitter Voltage
400 V
VEBO Emitter-Base Voltage
9V
IC Collector Current-Continuous
8A
ICM Collector Current-Peak
20 A
IB Base Current
4A
IBM Base Current-Peak
Collector Power Dissipation
PC @TC=25
Tj Junction Temperature
Tstg Storage Temperature Range
6
34
150
-65~150
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 3.7 /W
isc websitewww.iscsemi.cn
1


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUW12F electronic component.


Information Total 2 Pages
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