(PDF) BUX18C Datasheet - Silicon NPN Power Transistor

Número de pieza	BUX18C
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! INCHANGE Semiconductor isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX18 = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C ·High Switching Speed ·High Power Dissipation APPLICATIONS ·Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX18 250 VCEV Collector-Emitter Voltage VBE= -1.5V BUX18A BUX18B 350 400 V BUX18C 475 BUX18 200 VCEO(SUS) Collector-Emitter Voltage BUX18A BUX18B 325 375 V BUX18C 425 VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 8A PC Collector Power Dissipation@TC=25℃ 120 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc Product Specification BUX18/A/B/C isc website：www.iscsemi.cn 1 1 page

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PDF BUX18C Data sheet ( Hoja de datos )