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PDF MTA7D0N01H8 Data sheet ( Hoja de datos )
| Número de pieza | MTA7D0N01H8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C131H8
Issued Date : 2016.07.19
Revised Date :
Page No. : 1/10
N-Channel Enhancement Mode Power MOSFET
MTA7D0N01H8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
VGS=10V, ID=11A
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free lead plating and Halogen-free package
RDSON(TYP)
VGS=4.5V, ID=8A
VGS=3V, ID=5A
16V
37A
13A
5.3mΩ
6.2mΩ
7.7mΩ
Symbol
MTA7D0N01H8
G：Gate D：Drain S：Source
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTA7D0N01H8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA7D0N01H8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C131H8
Issued Date : 2016.07.19
Revised Date :
Page No. : 5/10
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
0
Crss
12 34567 8
VDS, Drain-Source Voltage(V)
9 10
Forward Transfer Admittance vs Drain Current
100
Threshold Voltage vs Junction Tempearture
1.8
1.6
1.4
1.2 ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
100 RDS(ON)
Limited
10
100μs
1ms
10ms
1
TA=25°C, Tj=150°C, VGS=4.5V
RθJA=50°C/W, Single Pulse
0.1
100ms
1s
DC
0.01 0.1
1
10
VDS, Drain-Source Voltage(V)
100
8
6
4
2 VDS=15V
ID=11A
0
0 4 8 12 16 20 24
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
20
18
16
14
12
10
8
6
4
2
0
25
TA=25°C, Tj=150°C, VGS=4.5V
RθJA=50°C/W, single pulse
50 75 100 125 150
Tj, Junctione Temperature(°C)
175
MTA7D0N01H8
CYStek Product Specification
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MTA7D0N01H8.PDF ] | |
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