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PDF MTB020N03KV8 Data sheet ( Hoja de datos )
| Número de pieza | MTB020N03KV8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB020N03KV8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.02.19
Revised Date : 2016.02.22
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB020N03KV8 BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=10A
VGS=4.5V, ID=8A
30V
10A
18A
12.4mΩ
16.8mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• ESD protected gate
• Pb-free lead plating package
Equivalent Circuit
MTB020N03KV8
Outline
DFN3×3
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTB020N03KV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020N03KV8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C143V8
Issued Date : 2016.02.19
Revised Date : 2016.02.22
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
1 ID=1mA
100 C oss
0.8
Crss
0.6
ID=250μA
10
0
10
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
1
VDS=15V
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDSON
Limited
10
1
0.1 TC=25°C, Tj=150°C
VGS=10V, RθJC=16°C/W
Single Pulse
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
VDS=15V
6
4 VDS=24V
2
ID=10A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
20
18
16
14
12
10
8
6
4
VGS=10V, RθJC=16°C/W
2
0
25 50 75 100 125
TC, Case Temperature(°C)
150
175
MTB020N03KV8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB020N03KV8.PDF ] | |
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