|
|
|
부품번호 | MTB020N03E3 기능 |
|
|
기능 | N-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C737E3
Issued Date : 2016.06.23
Revised Date :
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB020N03E3
BVDSS
ID@VGS=10V, TC=25°C
Features
RDS(ON)@VGS=10V, ID=20A
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
30V
34A
18mΩ (typ)
Symbol
MTB020N03E3
Outline
TO-220
G:Gate
D:Drain
S:Source
GDS
Ordering Information
Device
MTB020N03E3-0-UB-X
Package
Shipping
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB020N03E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C737E3
Issued Date : 2016.06.23
Revised Date :
Page No. : 4/8
Typical Characteristics
Typical Output Characteristics
50
Brekdown Voltage vs Ambient Temperature
1.2
40
10V,9V,8V,7V,6V,5V
30
4V
20
10
0
0
3.5V
VGS=3V
2 46 8
VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
1000
100
VGS=10V
VGS=4.5V
1.1
1
0.9 ID=250μA,
VGS=0V
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6 Tj=150°C
0.4
10
0.001
0.01 0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160 ID=20A
140
120
100
80
60
40
20
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
2 46 8
IDR, Reverse Drain Current (A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=20A
2 RDS(ON)@Tj=25°C : 18mΩ typ.
1.6
1.2
0.8
VGS=4.5V, ID=20A
0.4 RDS(ON)@Tj=25°C : 25mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB020N03E3
CYStek Product Specification
4페이지 CYStech Electronics Corp.
Spec. No. : C737E3
Issued Date : 2016.06.23
Revised Date :
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB020N03E3
CYStek Product Specification
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ MTB020N03E3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTB020N03E3 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |